Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00468766" target="_blank" >RIV/68378271:_____/16:00468766 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389021:_____/16:00509326

Výsledek na webu

<a href="http://dx.doi.org/10.3390/app6090238" target="_blank" >http://dx.doi.org/10.3390/app6090238</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/app6090238" target="_blank" >10.3390/app6090238</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

Popis výsledku v původním jazyce

We present an overview of our theoretical simulations on the interaction of ultrafast laser pulses with matter. Our dedicated simulation tool, X-ray induced Thermal And Non-thermal Transitions (XTANT) can currently treat semiconductors irradiated with soft to hard X-ray fs pulses. During the excitation and relaxation of solids, their optical properties such as reflectivity, transmission and absorption, are changing, affected by transient electron excitation and, at sufficiently high dose, by atomic relocations. We report how the transient optical properties can be used for diagnostics of electronic and structural transitions occurring in irradiated semiconductors. The presented methodology for calculation of the complex dielectric function applied in XTANT proves to be capable of describing changes in the optical parameters, when the solids are driven out of equilibrium by intense laser pulses. Comparison of model predictions with the existing experimental data shows a good agreement.

Název v anglickém jazyce

Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

Popis výsledku anglicky

We present an overview of our theoretical simulations on the interaction of ultrafast laser pulses with matter. Our dedicated simulation tool, X-ray induced Thermal And Non-thermal Transitions (XTANT) can currently treat semiconductors irradiated with soft to hard X-ray fs pulses. During the excitation and relaxation of solids, their optical properties such as reflectivity, transmission and absorption, are changing, affected by transient electron excitation and, at sufficiently high dose, by atomic relocations. We report how the transient optical properties can be used for diagnostics of electronic and structural transitions occurring in irradiated semiconductors. The presented methodology for calculation of the complex dielectric function applied in XTANT proves to be capable of describing changes in the optical parameters, when the solids are driven out of equilibrium by intense laser pulses. Comparison of model predictions with the existing experimental data shows a good agreement.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Sciences-Basel

ISSN

2076-3417

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

12

Strana od-do

—

Kód UT WoS článku

000385518000006

EID výsledku v databázi Scopus

2-s2.0-84991112220