Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00500993" target="_blank" >RIV/68378271:_____/18:00500993 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1361-6528/aac27d" target="_blank" >http://dx.doi.org/10.1088/1361-6528/aac27d</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6528/aac27d" target="_blank" >10.1088/1361-6528/aac27d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer

Popis výsledku v původním jazyce

MoS2 monolayer samples were synthesized on a SiO2/Si wafer and transferred to Ir(111) for nano-scale characterization. The samples were extensively characterized during every step of the transfer process, and MoS2 on the final substrate was examined down to the atomic level by scanning tunneling microscopy (STM). Subsequent transfer to the Ir(111) surface led to a strong drop of this optical signal but without further shifts of characteristic peaks. The electronic band gap was measured by scanning tunneling spectroscopy (STS), revealing n-doping and lateral nano-scale variations. The combined use of STM imaging and density functional theory (DFT) calculations allows us to identify the most recurring point-like defects as S vacancies.n

Název v anglickém jazyce

Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer

Popis výsledku anglicky

MoS2 monolayer samples were synthesized on a SiO2/Si wafer and transferred to Ir(111) for nano-scale characterization. The samples were extensively characterized during every step of the transfer process, and MoS2 on the final substrate was examined down to the atomic level by scanning tunneling microscopy (STM). Subsequent transfer to the Ir(111) surface led to a strong drop of this optical signal but without further shifts of characteristic peaks. The electronic band gap was measured by scanning tunneling spectroscopy (STS), revealing n-doping and lateral nano-scale variations. The combined use of STM imaging and density functional theory (DFT) calculations allows us to identify the most recurring point-like defects as S vacancies.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanotechnology

ISSN

0957-4484

e-ISSN

—

Svazek periodika

29

Číslo periodika v rámci svazku

30

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

—

Kód UT WoS článku

000438068400001

EID výsledku v databázi Scopus

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