Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00511161" target="_blank" >RIV/68378271:_____/19:00511161 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0301494" target="_blank" >http://hdl.handle.net/11104/0301494</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c9nr03187a" target="_blank" >10.1039/c9nr03187a</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Popis výsledku v původním jazyce

Introduction of in situ HCl etching to an epitaxial growth process has been shown to suppress radial growth and improve the morphology and optical properties of nanowires. We investigate the dynamics of photogenerated charge carriers in a series of InP nanowires grown with varied HCl fluxes. A variety of time resolved methods was combined to investigate charge trapping and recombination processes in the nanowires. We found that the photoluminescence decay is dominated by the decay of the mobile hole population due to trapping, which is affected by the HCl etching. The hole trapping rate is in general faster at the top of the nanowires than at the bottom. In contrast, electrons remain highly mobile until they recombine nonradiatively with the trapped holes. The slowest hole trapping as well as the least efficient non-radiative recombination was recorded for etching using the HCl molar fraction of χHCl = 5.4e−5.n

Název v anglickém jazyce

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Popis výsledku anglicky

Introduction of in situ HCl etching to an epitaxial growth process has been shown to suppress radial growth and improve the morphology and optical properties of nanowires. We investigate the dynamics of photogenerated charge carriers in a series of InP nanowires grown with varied HCl fluxes. A variety of time resolved methods was combined to investigate charge trapping and recombination processes in the nanowires. We found that the photoluminescence decay is dominated by the decay of the mobile hole population due to trapping, which is affected by the HCl etching. The hole trapping rate is in general faster at the top of the nanowires than at the bottom. In contrast, electrons remain highly mobile until they recombine nonradiatively with the trapped holes. The slowest hole trapping as well as the least efficient non-radiative recombination was recorded for etching using the HCl molar fraction of χHCl = 5.4e−5.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale

ISSN

2040-3364

e-ISSN

—

Svazek periodika

11

Číslo periodika v rámci svazku

40

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

18550-18558

Kód UT WoS článku

000490991700038

EID výsledku v databázi Scopus

2-s2.0-85073491321