On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00517970" target="_blank" >RIV/68378271:_____/19:00517970 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.optmat.2019.109252" target="_blank" >https://doi.org/10.1016/j.optmat.2019.109252</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2019.109252" target="_blank" >10.1016/j.optmat.2019.109252</a>

Jazyk výsledku

angličtina

Název v původním jazyce

On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals

Popis výsledku v původním jazyce

Temperature dependences of the photoluminescence and X-ray excited luminescence intensity and thermally stimulated luminescence glow curves are measured in the 4.2–300 K temperature range for the undoped and Ce3+ - doped Gd3(Ga,Al)5O12 crystals. The conclusion is made that no low-temperature quenching of the Ce3+ -related photoluminescence takes place. In both the undoped and the Ce3+ - doped crystals, temperature dependences of the X-ray excited recombination luminescence intensity correlate with the position and shape of thermally stimulated luminescence glow curve peaks of the hole origin. Low-temperature quenching of the X-ray excited luminescence in these crystals is explained by the fact that at low temperatures, free holes are trapped at oxygen ions while electrons are trapped at various intrinsic defects. In Ce3+ - doped Gd3(Ga,Al)5O12 crystals, thermally stimulated release of the trapped holes and electrons and their subsequent recombination at Ce3+ ions result in the enhancement of the Ce3+ - related electron recombination luminescence with the increasing temperature in the 10–180 K range.

Název v anglickém jazyce

On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals

Popis výsledku anglicky

Temperature dependences of the photoluminescence and X-ray excited luminescence intensity and thermally stimulated luminescence glow curves are measured in the 4.2–300 K temperature range for the undoped and Ce3+ - doped Gd3(Ga,Al)5O12 crystals. The conclusion is made that no low-temperature quenching of the Ce3+ -related photoluminescence takes place. In both the undoped and the Ce3+ - doped crystals, temperature dependences of the X-ray excited recombination luminescence intensity correlate with the position and shape of thermally stimulated luminescence glow curve peaks of the hole origin. Low-temperature quenching of the X-ray excited luminescence in these crystals is explained by the fact that at low temperatures, free holes are trapped at oxygen ions while electrons are trapped at various intrinsic defects. In Ce3+ - doped Gd3(Ga,Al)5O12 crystals, thermally stimulated release of the trapped holes and electrons and their subsequent recombination at Ce3+ ions result in the enhancement of the Ce3+ - related electron recombination luminescence with the increasing temperature in the 10–180 K range.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials

ISSN

0925-3467

e-ISSN

—

Svazek periodika

95

Číslo periodika v rámci svazku

Sep

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

1-5

Kód UT WoS článku

000497246900054

EID výsledku v databázi Scopus

2-s2.0-85070731875