Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521463" target="_blank" >RIV/68378271:_____/19:00521463 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0306082" target="_blank" >http://hdl.handle.net/11104/0306082</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5109927" target="_blank" >10.1063/1.5109927</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry

Popis výsledku v původním jazyce

Transient dielectric functions with a 120 fs time resolution of Ge, Si, and InP were acquired from 1.7 to 3.5eV with a femtosecond pump-probe rotating-compensator ellipsometer. The intensity of the pump laser (with 1.55, 3.10, or 4.65eV photon energy) was adjusted to create an initial near-surface carrier density of 10(20)cm(-3). In Ge, there is a significant (similar to 15%) decrease in the E-1 and E-1+Delta(1) critical point absorption and a Kramers-Kronig consistent change in the refractive index because photoexcited electrons at L block these transitions and reduce their amplitudes. Only a small redshift of the E-1 critical point is observed, which we attribute to lattice heating and exchange-correlation effects. Minimal changes were found for Si and InP, where electrons near Delta and Gamma do not participate in interband transitions between 1.7 and 3.5eV.

Název v anglickém jazyce

Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry

Popis výsledku anglicky

Transient dielectric functions with a 120 fs time resolution of Ge, Si, and InP were acquired from 1.7 to 3.5eV with a femtosecond pump-probe rotating-compensator ellipsometer. The intensity of the pump laser (with 1.55, 3.10, or 4.65eV photon energy) was adjusted to create an initial near-surface carrier density of 10(20)cm(-3). In Ge, there is a significant (similar to 15%) decrease in the E-1 and E-1+Delta(1) critical point absorption and a Kramers-Kronig consistent change in the refractive index because photoexcited electrons at L block these transitions and reduce their amplitudes. Only a small redshift of the E-1 critical point is observed, which we attribute to lattice heating and exchange-correlation effects. Minimal changes were found for Si and InP, where electrons near Delta and Gamma do not participate in interband transitions between 1.7 and 3.5eV.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/LQ1606" target="_blank" >LQ1606: ELI Beamlines: Mezinárodní centrum Excelemce</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

115

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

1-4

Kód UT WoS článku

000478913700025

EID výsledku v databázi Scopus

2-s2.0-85073886140