Anisotropic strain in rare-earth substituted ceria thin films probed by polarized Raman spectroscopy and first-principles calculations
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00537684" target="_blank" >RIV/68378271:_____/20:00537684 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1021/acsami.0c14249" target="_blank" >https://doi.org/10.1021/acsami.0c14249</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.0c14249" target="_blank" >10.1021/acsami.0c14249</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Anisotropic strain in rare-earth substituted ceria thin films probed by polarized Raman spectroscopy and first-principles calculations
Popis výsledku v původním jazyce
We propose a method for measuring strain in rare-earth doped ceria thin films by polarized Raman spectroscopy. We study epitaxial CeO2 films substituted by La, Gd, and Yb grown on MgO substrates with BaZrO3 and SrTiO3 interlayers, where different levels of strain are generated by annealing at distinct temperatures. The films show in-plane compression and out-of-plane expansion, resulting in a lowering from the bulk cubic to tetragonal lattice symmetry. This leads to the splitting of the F2g Raman mode in the cubic phase to B2g and Eg modes in the tetragonal lattice. The symmetry and frequency of these modes are determined by polarized Raman in the backscattering and right-angle scattering geometries as well as by first-principal calculations. The frequency splitting of the two modes is proportional to the strain measured by X-ray diffraction and its magnitude agrees with first-principles calculations.
Název v anglickém jazyce
Anisotropic strain in rare-earth substituted ceria thin films probed by polarized Raman spectroscopy and first-principles calculations
Popis výsledku anglicky
We propose a method for measuring strain in rare-earth doped ceria thin films by polarized Raman spectroscopy. We study epitaxial CeO2 films substituted by La, Gd, and Yb grown on MgO substrates with BaZrO3 and SrTiO3 interlayers, where different levels of strain are generated by annealing at distinct temperatures. The films show in-plane compression and out-of-plane expansion, resulting in a lowering from the bulk cubic to tetragonal lattice symmetry. This leads to the splitting of the F2g Raman mode in the cubic phase to B2g and Eg modes in the tetragonal lattice. The symmetry and frequency of these modes are determined by polarized Raman in the backscattering and right-angle scattering geometries as well as by first-principal calculations. The frequency splitting of the two modes is proportional to the strain measured by X-ray diffraction and its magnitude agrees with first-principles calculations.
Klasifikace
Druh
J<sub>SC</sub> - Článek v periodiku v databázi SCOPUS
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/GX19-28594X" target="_blank" >GX19-28594X: Feroelektrické skyrmiony</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
ACS Applied Materials and Interfaces
ISSN
1944-8244
e-ISSN
—
Svazek periodika
12
Číslo periodika v rámci svazku
50
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
9
Strana od-do
56251-56259
Kód UT WoS článku
000600202300068
EID výsledku v databázi Scopus
2-s2.0-85097784735