Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00538408" target="_blank" >RIV/68378271:_____/20:00538408 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/1.5143735" target="_blank" >https://doi.org/10.1063/1.5143735</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5143735" target="_blank" >10.1063/1.5143735</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

Popis výsledku v původním jazyce

Dielectric and conducting properties of unintentionally doped bulk and Sn-doped thin film β-Ga2O3 samples were studied using time- domain terahertz spectroscopy. The low-temperature spectra of the unintentionally doped sample were fit using a model involving two oscillators. The parameters of one of them show an unusual temperature dependence, in particular, a pronounced increase in the oscillator strength upon heating above 50 K. This is interpreted as an absorption due to thermally activated charge carriers moving in localized potential minima linked to the unintentional doping. Upon heating, the influence of this optical conductivity mechanism strongly increases, and the sample becomes opaque in the THz range near 100 K. The nanocrystalline Sn-doped Ga2 O3 thin film sample exhibits a much higher optical conductivity than the unintentionally doped bulk sample, and its spectra are remarkably stable over a broad temperature range (4–750 K).n

Název v anglickém jazyce

Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

Popis výsledku anglicky

Dielectric and conducting properties of unintentionally doped bulk and Sn-doped thin film β-Ga2O3 samples were studied using time- domain terahertz spectroscopy. The low-temperature spectra of the unintentionally doped sample were fit using a model involving two oscillators. The parameters of one of them show an unusual temperature dependence, in particular, a pronounced increase in the oscillator strength upon heating above 50 K. This is interpreted as an absorption due to thermally activated charge carriers moving in localized potential minima linked to the unintentional doping. Upon heating, the influence of this optical conductivity mechanism strongly increases, and the sample becomes opaque in the THz range near 100 K. The nanocrystalline Sn-doped Ga2 O3 thin film sample exhibits a much higher optical conductivity than the unintentionally doped bulk sample, and its spectra are remarkably stable over a broad temperature range (4–750 K).n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Svazek periodika

127

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000531818600004

EID výsledku v databázi Scopus

2-s2.0-85092059928