Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00542789" target="_blank" >RIV/68378271:_____/20:00542789 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/20:10423150

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2020.146240" target="_blank" >https://doi.org/10.1016/j.apsusc.2020.146240</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2020.146240" target="_blank" >10.1016/j.apsusc.2020.146240</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media

Popis výsledku v původním jazyce

Reversible structural changes of As-rich As–Se nanolayers occurring during in situ thermal annealing and above-bandgap laser illumination were studied by synchrotron radiation photoelectron spectroscopy. It was found that the first thermal annealing of As56Se44 nanolayers led to a decrease of the concentration of As that can be connected with evaporation of more volatile As-rich fractions from the surface. This process is accompanied by structural rearrangements in the nanolayers. In situ green laser illumination of annealed samples causes an increase in the concentration of homopolar As–As bonds associated with As-Se2As s, while the opposite effect was detected during further thermal treatment.

Název v anglickém jazyce

Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media

Popis výsledku anglicky

Reversible structural changes of As-rich As–Se nanolayers occurring during in situ thermal annealing and above-bandgap laser illumination were studied by synchrotron radiation photoelectron spectroscopy. It was found that the first thermal annealing of As56Se44 nanolayers led to a decrease of the concentration of As that can be connected with evaporation of more volatile As-rich fractions from the surface. This process is accompanied by structural rearrangements in the nanolayers. In situ green laser illumination of annealed samples causes an increase in the concentration of homopolar As–As bonds associated with As-Se2As s, while the opposite effect was detected during further thermal treatment.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

518

Číslo periodika v rámci svazku

July

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

146240

Kód UT WoS článku

000531747600007

EID výsledku v databázi Scopus

2-s2.0-85083078445