Combined in situ photoluminescence and X-ray scattering reveals defect formation in lead-halide perovskite films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00547190" target="_blank" >RIV/68378271:_____/21:00547190 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/21:00353797

Výsledek na webu

<a href="https://doi.org/10.1021/acs.jpclett.1c02869" target="_blank" >https://doi.org/10.1021/acs.jpclett.1c02869</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpclett.1c02869" target="_blank" >10.1021/acs.jpclett.1c02869</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Combined in situ photoluminescence and X-ray scattering reveals defect formation in lead-halide perovskite films

Popis výsledku v původním jazyce

Lead-halide perovskites have established a firm foothold in photovoltaics and optoelectronics due to their steadily increasing power conversion efficiencies approaching conventional inorganic single-crystal semiconductors. However, further performance improvement requires reducing defect-assisted, nonradiative recombination of charge carriers in the perovskite layers. In this study, we analyze the crystallization kinetics of the lead-halide perovskite MAPbI3–xClx during thermal annealing, employing in situ photoluminescence (PL) spectroscopy complemented by lab-based grazing-incidence wide-angle X-ray scattering (GIWAXS). We show that the nonmonotonous character of PL intensity development reflects the perovskite phase volume, as well as the occurrence of the defects states at the perovskite layer surface and grain boundaries. The combined characterization approach enables easy determination of defect kinetics during perovskite formation in real-time.

Název v anglickém jazyce

Combined in situ photoluminescence and X-ray scattering reveals defect formation in lead-halide perovskite films

Popis výsledku anglicky

Lead-halide perovskites have established a firm foothold in photovoltaics and optoelectronics due to their steadily increasing power conversion efficiencies approaching conventional inorganic single-crystal semiconductors. However, further performance improvement requires reducing defect-assisted, nonradiative recombination of charge carriers in the perovskite layers. In this study, we analyze the crystallization kinetics of the lead-halide perovskite MAPbI3–xClx during thermal annealing, employing in situ photoluminescence (PL) spectroscopy complemented by lab-based grazing-incidence wide-angle X-ray scattering (GIWAXS). We show that the nonmonotonous character of PL intensity development reflects the perovskite phase volume, as well as the occurrence of the defects states at the perovskite layer surface and grain boundaries. The combined characterization approach enables easy determination of defect kinetics during perovskite formation in real-time.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry Letters

ISSN

1948-7185

e-ISSN

—

Svazek periodika

12

Číslo periodika v rámci svazku

41

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

10156-10162

Kód UT WoS článku

000711025300021

EID výsledku v databázi Scopus

2-s2.0-85118187751