Electrical conductivity in oxygen-substituted SrTiO3-δ films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00547877" target="_blank" >RIV/68378271:_____/21:00547877 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/5.0072225" target="_blank" >https://doi.org/10.1063/5.0072225</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0072225" target="_blank" >10.1063/5.0072225</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrical conductivity in oxygen-substituted SrTiO3-δ films

Popis výsledku v původním jazyce

Enhancement of electrical conductivity in fundamentally insulating ABO3 perovskite oxide ferroelectrics is crucial for innovative applications in resistive switching, photovoltaics, and catalysis. One of the methods to raise conductivity in bulk crystals or ceramics relies on the possibility to remove and/or substitute oxygen atoms. Here, we explored this approach for thin films of the representative perovskite oxide SrTiO3. Small-signal AC conductivity was investigated in epitaxial and polycrystalline films, where oxygen vacancies (VO), nitrogen (N), or hydrogen (H) were introduced in situ during filmgrowth. Hoppingmechanismof conductivity was evidenced by the observed strong growth of AC conductivity with temperature, frequency, and AC voltage in all films. Small polarons were identified as charge carriers. Oxygen vacancies/substitutions were suggested to facilitate hopping probability by generating sites for carrier localization.

Název v anglickém jazyce

Electrical conductivity in oxygen-substituted SrTiO3-δ films

Popis výsledku anglicky

Enhancement of electrical conductivity in fundamentally insulating ABO3 perovskite oxide ferroelectrics is crucial for innovative applications in resistive switching, photovoltaics, and catalysis. One of the methods to raise conductivity in bulk crystals or ceramics relies on the possibility to remove and/or substitute oxygen atoms. Here, we explored this approach for thin films of the representative perovskite oxide SrTiO3. Small-signal AC conductivity was investigated in epitaxial and polycrystalline films, where oxygen vacancies (VO), nitrogen (N), or hydrogen (H) were introduced in situ during filmgrowth. Hoppingmechanismof conductivity was evidenced by the observed strong growth of AC conductivity with temperature, frequency, and AC voltage in all films. Small polarons were identified as charge carriers. Oxygen vacancies/substitutions were suggested to facilitate hopping probability by generating sites for carrier localization.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

1077-3118

Svazek periodika

119

Číslo periodika v rámci svazku

Nov.

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

192901

Kód UT WoS článku

000721489800006

EID výsledku v databázi Scopus

2-s2.0-85119037892