Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00549926" target="_blank" >RIV/68378271:_____/21:00549926 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/21:00352817

Výsledek na webu

<a href="http://hdl.handle.net/11104/0325809" target="_blank" >http://hdl.handle.net/11104/0325809</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1515/nanoph-2021-0369" target="_blank" >10.1515/nanoph-2021-0369</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

Popis výsledku v původním jazyce

We demonstrate a new two-step method for fabricating diamond PhC slabs with leaky modes overlapping the emission line of the silicon vacancy (SiV) centers. In the first step, the PhC structure with leaky modes blue shifted from the SiV emission line is fabricated in a nanocrystalline diamond without SiV centers. A thin layer of SiV-rich diamond is then deposited over the PhC slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method. An intensity enhancement of the zero-phonon line of the SiV centers by a factor of nine is achieved. The color centers in the thin surface layer are beneficial for sensing applications and their properties can also be further controlled by the diamond surface chemistry. The demonstrated PhC tuning method can also be easily adapted to other optical centers and photonic structures of different types in diamond and other materials.n

Název v anglickém jazyce

Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

Popis výsledku anglicky

We demonstrate a new two-step method for fabricating diamond PhC slabs with leaky modes overlapping the emission line of the silicon vacancy (SiV) centers. In the first step, the PhC structure with leaky modes blue shifted from the SiV emission line is fabricated in a nanocrystalline diamond without SiV centers. A thin layer of SiV-rich diamond is then deposited over the PhC slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method. An intensity enhancement of the zero-phonon line of the SiV centers by a factor of nine is achieved. The color centers in the thin surface layer are beneficial for sensing applications and their properties can also be further controlled by the diamond surface chemistry. The demonstrated PhC tuning method can also be easily adapted to other optical centers and photonic structures of different types in diamond and other materials.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanophotonics

ISSN

2192-8606

e-ISSN

2192-8614

Svazek periodika

10

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

11

Strana od-do

3895-3905

Kód UT WoS článku

000755720800010

EID výsledku v databázi Scopus

2-s2.0-85115309578