The synthesis of Au-NPs by ion implantation in the crystalline GaN and characterisation of their optical properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00565828" target="_blank" >RIV/68378271:_____/22:00565828 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/22:00565828

Výsledek na webu

<a href="https://doi.org/10.1051/epjconf/202226101003" target="_blank" >https://doi.org/10.1051/epjconf/202226101003</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1051/epjconf/202226101003" target="_blank" >10.1051/epjconf/202226101003</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The synthesis of Au-NPs by ion implantation in the crystalline GaN and characterisation of their optical properties

Popis výsledku v původním jazyce

Nanostructured surfaces with embedded noble metal nanoparticles is an attractive way for manipulation with the optical properties of wide bandgap semiconductors applied in optoelectronics, photocatalytic processes or for Surface-Enhanced Raman spectroscopy. Ion implantation offers an effective way for nanoparticle preparation without the use of additional chemicals that offers precise control of nanoparticle depth distribution. The aim of this study is a synthesis of the gold nanoparticles in GaN by implantation of 1.85 MeV Au ions with high fluences up to 7×1016 cm-2 and study of optical properties of Au implanted GaN. Implanted crystals were annealed at 800 °C in an ammonia atmosphere for 20 min to support Au nanoparticle creation and GaN recovery. The structure characterisation has been realized by Rutherford backscattering spectroscopy in channelling mode and it showed the formation of two separated disordered regions – the surface region and buried layer. The lower implantation fluences induce damage mainly in a buried layer. However, the increase of the Au-ion fluence leads to the increase of surface disorder as well. Further, the increase of the Au-ion fluence induces the Au dopant shift to the surface and multimodal Audepth profiles. TEM analyses confirmed the formation of Au nanoparticles in the implanted samples after annealing with sizes up to 14 nm. The increase of light absorption and modification of GaN bandgap of the Au modified GaN was deduced from the change in optical transmission spectra between 370 – 1400 nm.

Název v anglickém jazyce

The synthesis of Au-NPs by ion implantation in the crystalline GaN and characterisation of their optical properties

Popis výsledku anglicky

Nanostructured surfaces with embedded noble metal nanoparticles is an attractive way for manipulation with the optical properties of wide bandgap semiconductors applied in optoelectronics, photocatalytic processes or for Surface-Enhanced Raman spectroscopy. Ion implantation offers an effective way for nanoparticle preparation without the use of additional chemicals that offers precise control of nanoparticle depth distribution. The aim of this study is a synthesis of the gold nanoparticles in GaN by implantation of 1.85 MeV Au ions with high fluences up to 7×1016 cm-2 and study of optical properties of Au implanted GaN. Implanted crystals were annealed at 800 °C in an ammonia atmosphere for 20 min to support Au nanoparticle creation and GaN recovery. The structure characterisation has been realized by Rutherford backscattering spectroscopy in channelling mode and it showed the formation of two separated disordered regions – the surface region and buried layer. The lower implantation fluences induce damage mainly in a buried layer. However, the increase of the Au-ion fluence leads to the increase of surface disorder as well. Further, the increase of the Au-ion fluence induces the Au dopant shift to the surface and multimodal Audepth profiles. TEM analyses confirmed the formation of Au nanoparticles in the implanted samples after annealing with sizes up to 14 nm. The increase of light absorption and modification of GaN bandgap of the Au modified GaN was deduced from the change in optical transmission spectra between 370 – 1400 nm.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

EPJ Web of Conferences

ISBN

—

ISSN

2100-014X

e-ISSN

2100-014X

Počet stran výsledku

8

Strana od-do

01003

Název nakladatele

EDP sciences

Místo vydání

Les ulis

Místo konání akce

Prague

Datum konání akce

12. 9. 2021

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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