Role of Van Hove singularities and effective mass anisotropy in polarization-resolved high harmonic spectroscopy of silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00568403" target="_blank" >RIV/68378271:_____/22:00568403 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/22:10451971

Výsledek na webu

<a href="https://hdl.handle.net/11104/0339715" target="_blank" >https://hdl.handle.net/11104/0339715</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s42005-022-01075-y" target="_blank" >10.1038/s42005-022-01075-y</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Role of Van Hove singularities and effective mass anisotropy in polarization-resolved high harmonic spectroscopy of silicon

Popis výsledku v původním jazyce

Nonlinear optical response of materials exposed to strong nonresonant light fields leads to production of high energy photons whose spectra contain fingerprints of the coherent electron dynamics in the material. In this paper we investigate how the high harmonic spectra generated in crystalline silicon are linked to specific properties of its band structure. By comparing the polarization anisotropy of high harmonic spectra for two distinct frequencies of the driving pulses we show that the anisotropy has two sources. When driven by mid-infrared light, the signal at specific photon energies is enhanced by the presence of Van Hove singularities in the joint density of states of silicon. With near-infrared driving pulses, in contrast, the high harmonic yield is mainly influenced by the anisotropy of the reduced mass of electron-hole pair, which is related to the nonresonant excitation probability. The experimental results are compared with numerical calculations using time-dependent density functional theory.

Název v anglickém jazyce

Role of Van Hove singularities and effective mass anisotropy in polarization-resolved high harmonic spectroscopy of silicon

Popis výsledku anglicky

Nonlinear optical response of materials exposed to strong nonresonant light fields leads to production of high energy photons whose spectra contain fingerprints of the coherent electron dynamics in the material. In this paper we investigate how the high harmonic spectra generated in crystalline silicon are linked to specific properties of its band structure. By comparing the polarization anisotropy of high harmonic spectra for two distinct frequencies of the driving pulses we show that the anisotropy has two sources. When driven by mid-infrared light, the signal at specific photon energies is enhanced by the presence of Van Hove singularities in the joint density of states of silicon. With near-infrared driving pulses, in contrast, the high harmonic yield is mainly influenced by the anisotropy of the reduced mass of electron-hole pair, which is related to the nonresonant excitation probability. The experimental results are compared with numerical calculations using time-dependent density functional theory.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

COMMUNICATIONS PHYSICS

ISSN

2399-3650

e-ISSN

2399-3650

Svazek periodika

5

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

288

Kód UT WoS článku

000885004200001

EID výsledku v databázi Scopus

2-s2.0-85142191608