Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00579305" target="_blank" >RIV/68378271:_____/23:00579305 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0348145" target="_blank" >https://hdl.handle.net/11104/0348145</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.15407/spqeo26.01.030" target="_blank" >10.15407/spqeo26.01.030</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

Popis výsledku v původním jazyce

The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration (ND – NA) ≈ 1∙1017...4∙1019 cm–3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (ε1) and electron hopping over nitrogen donors in the D0 bands (ε3) were determined. It was found that in 6H-SiC ε1 = 50 meV for (ND – NA) ≈ 1∙10^17cm^–3, ε1 = 32 meV and ε3 = 6 meV for (ND – NA) ≈ 1∙10^19 cm^-3, ε1 = 13.5 meV and ε3 = 3.5 meV for (ND–NA) ≈ 4∙10^19 cm^–3.

Název v anglickém jazyce

Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

Popis výsledku anglicky

The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration (ND – NA) ≈ 1∙1017...4∙1019 cm–3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (ε1) and electron hopping over nitrogen donors in the D0 bands (ε3) were determined. It was found that in 6H-SiC ε1 = 50 meV for (ND – NA) ≈ 1∙10^17cm^–3, ε1 = 32 meV and ε3 = 6 meV for (ND – NA) ≈ 1∙10^19 cm^-3, ε1 = 13.5 meV and ε3 = 3.5 meV for (ND–NA) ≈ 4∙10^19 cm^–3.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF16_019%2F0000760" target="_blank" >EF16_019/0000760: Fyzika pevných látek pro 21. století</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductor Physics Quantum Electronics & Optoelectronics

ISSN

1560-8034

e-ISSN

1605-6582

Svazek periodika

26

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

UA - Ukrajina

Počet stran výsledku

6

Strana od-do

30-35

Kód UT WoS článku

000958234100004

EID výsledku v databázi Scopus

2-s2.0-85152599179