Nanoscale investigation on the improvement of electrical properties of boron-doped diamond nanostructures for high-performance plasma displays

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00579329" target="_blank" >RIV/68378271:_____/23:00579329 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1021/acsaelm.3c00713" target="_blank" >https://doi.org/10.1021/acsaelm.3c00713</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaelm.3c00713" target="_blank" >10.1021/acsaelm.3c00713</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nanoscale investigation on the improvement of electrical properties of boron-doped diamond nanostructures for high-performance plasma displays

Popis výsledku v původním jazyce

Electrically conducting vertically aligned boron-doped diamond (BDD) nanostructures are fabricated from BDD films by reactive ion etching (RIE) using Au masks. Two different morphologies of BDD films, microcrystalline BDD (BMCD) and ultrananocrystalline BDD (BUNCD), are utilized to fabricate nanorods. The formation of nanorods is controlled via the size of Au particles on the surface of diamond films. High electrical conductivity of 7.9 × 103 S/cm at 573 K is achieved for the nanorods formed on BMCD films and using an Au mask with a large particle size (BMCDL). Conducting atomic force microscopy (C-AFM) studies show that high emission sites are observed in BMCDL nanorods. These highly conducting BMCDL nanorods are used as cathodes in plasma illumination (PI) devices, which exhibit improved characteristics such as a low breakdown voltage of 360 V and high plasma current density of 8.0 mA/cm2 with high plasma lifetime stability of 51 min.

Název v anglickém jazyce

Nanoscale investigation on the improvement of electrical properties of boron-doped diamond nanostructures for high-performance plasma displays

Popis výsledku anglicky

Electrically conducting vertically aligned boron-doped diamond (BDD) nanostructures are fabricated from BDD films by reactive ion etching (RIE) using Au masks. Two different morphologies of BDD films, microcrystalline BDD (BMCD) and ultrananocrystalline BDD (BUNCD), are utilized to fabricate nanorods. The formation of nanorods is controlled via the size of Au particles on the surface of diamond films. High electrical conductivity of 7.9 × 103 S/cm at 573 K is achieved for the nanorods formed on BMCD films and using an Au mask with a large particle size (BMCDL). Conducting atomic force microscopy (C-AFM) studies show that high emission sites are observed in BMCDL nanorods. These highly conducting BMCDL nanorods are used as cathodes in plasma illumination (PI) devices, which exhibit improved characteristics such as a low breakdown voltage of 360 V and high plasma current density of 8.0 mA/cm2 with high plasma lifetime stability of 51 min.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/GF23-04322L" target="_blank" >GF23-04322L: Heterogenní diamantové nanoarchitektury sloužící ke studiu opto-elektrochemické interakce s komplexy protilátek</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Electronic Materials

ISSN

2637-6113

e-ISSN

2637-6113

Svazek periodika

5

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

4946-4958

Kód UT WoS článku

001067226500001

EID výsledku v databázi Scopus

2-s2.0-85173184238