Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00603260" target="_blank" >RIV/68378271:_____/25:00603260 - isvavai.cz</a>
Výsledek na webu
<a href="https://hdl.handle.net/11104/0360643" target="_blank" >https://hdl.handle.net/11104/0360643</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6463/ad9d51" target="_blank" >10.1088/1361-6463/ad9d51</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations
Popis výsledku v původním jazyce
Using different laser irradiation patterns to modify the silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shifted from the previous one perpendicular to light polarization, LIPSS are not formed even after many pulses. This coherence effect is explained by a three-wave interference, involving surface electromagnetic waves (SEWs) generated within the irradiated spot, SEWs scattered from the crater edge formed by the previous laser pulse, and the incoming laser pulse, that provides conditions for amplification of the periodic light-absorption pattern. To study possible consequences of SEW scattering from the laser-modified regions, where the refractive index can change due to material melting, amorphization, and the residual stress formed by previous laser pulses, hydrodynamic modelling and simulations have been performed within the melting regime. The simulations show that stress and vertical displacement could be amplified upon laser scanning. Both mechanisms, three-wave interference and stress accumulation, could enable an additional degree of controlling surface structuring.
Název v anglickém jazyce
Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations
Popis výsledku anglicky
Using different laser irradiation patterns to modify the silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shifted from the previous one perpendicular to light polarization, LIPSS are not formed even after many pulses. This coherence effect is explained by a three-wave interference, involving surface electromagnetic waves (SEWs) generated within the irradiated spot, SEWs scattered from the crater edge formed by the previous laser pulse, and the incoming laser pulse, that provides conditions for amplification of the periodic light-absorption pattern. To study possible consequences of SEW scattering from the laser-modified regions, where the refractive index can change due to material melting, amorphization, and the residual stress formed by previous laser pulses, hydrodynamic modelling and simulations have been performed within the melting regime. The simulations show that stress and vertical displacement could be amplified upon laser scanning. Both mechanisms, three-wave interference and stress accumulation, could enable an additional degree of controlling surface structuring.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20501 - Materials engineering
Návaznosti výsledku
Projekt
<a href="/cs/project/EH22_008%2F0004596" target="_blank" >EH22_008/0004596: Senzory a detektory pro informační společnost budoucnosti</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Physics D-Applied Physics
ISSN
0022-3727
e-ISSN
1361-6463
Svazek periodika
58
Číslo periodika v rámci svazku
8
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
9
Strana od-do
085307
Kód UT WoS článku
001380810100001
EID výsledku v databázi Scopus
2-s2.0-85219705417