A self-adapting energy-band docking of CuGaS2@BiVO4 S-scheme structure for efficient photoelectrochemical hydrogen production

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00636162" target="_blank" >RIV/68378271:_____/25:00636162 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1007/s12598-024-03072-2" target="_blank" >https://doi.org/10.1007/s12598-024-03072-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s12598-024-03072-2" target="_blank" >10.1007/s12598-024-03072-2</a>

Jazyk výsledku

angličtina

Název v původním jazyce

A self-adapting energy-band docking of CuGaS2@BiVO4 S-scheme structure for efficient photoelectrochemical hydrogen production

Popis výsledku v původním jazyce

Typical p-n junctions have emerged as a promising strategy for contending with charge carrier recombination in solar conversion. However, the photo-corrosion and unsuitable energy band positions still hinder their practical application for hydrogen production from water in photoelectrochemical systems. Here, an in-situ photo-oxidation method is proposed for achieving self-adapting activation of BiVO4-based photoanodes with surface-encapsulated CuGaS2 particles by the ZnO layer. The self-adapting activation demotes the energy band positions of CuGaS2, establishing an S-scheme structure with BiVO4, resulting in an efficient p-n junction photoanode. The optimal sample exhibits enhanced photocurrent and an onset potential cathodically shifted by similar to 300 mV compared with BiVO4, which is attributed to significantly enhanced charge transport and transfer efficiencies. As expected, it attains the highest photocurrent value of 5.87 mA.cm(-2), aided by a hole scavenger at 1.23 V versus a reversible hydrogen electrode, which significantly surpasses that of BiVO4 (4.32 mA.cm(-2)).

Název v anglickém jazyce

A self-adapting energy-band docking of CuGaS2@BiVO4 S-scheme structure for efficient photoelectrochemical hydrogen production

Popis výsledku anglicky

Typical p-n junctions have emerged as a promising strategy for contending with charge carrier recombination in solar conversion. However, the photo-corrosion and unsuitable energy band positions still hinder their practical application for hydrogen production from water in photoelectrochemical systems. Here, an in-situ photo-oxidation method is proposed for achieving self-adapting activation of BiVO4-based photoanodes with surface-encapsulated CuGaS2 particles by the ZnO layer. The self-adapting activation demotes the energy band positions of CuGaS2, establishing an S-scheme structure with BiVO4, resulting in an efficient p-n junction photoanode. The optimal sample exhibits enhanced photocurrent and an onset potential cathodically shifted by similar to 300 mV compared with BiVO4, which is attributed to significantly enhanced charge transport and transfer efficiencies. As expected, it attains the highest photocurrent value of 5.87 mA.cm(-2), aided by a hole scavenger at 1.23 V versus a reversible hydrogen electrode, which significantly surpasses that of BiVO4 (4.32 mA.cm(-2)).

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

RARE METALS

ISSN

1001-0521

e-ISSN

1867-7185

Svazek periodika

44

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

CN - Čínská lidová republika

Počet stran výsledku

14

Strana od-do

1742-1755

Kód UT WoS článku

001375826100001

EID výsledku v databázi Scopus

2-s2.0-105001077242