Room-temperature epitaxy of α-CH3NH3PbI3 halide perovskite by pulsed laser deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00639322" target="_blank" >RIV/68378271:_____/25:00639322 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1038/s44160-024-00717-z" target="_blank" >https://doi.org/10.1038/s44160-024-00717-z</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s44160-024-00717-z" target="_blank" >10.1038/s44160-024-00717-z</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Room-temperature epitaxy of α-CH3NH3PbI3 halide perovskite by pulsed laser deposition

Popis výsledku v původním jazyce

Epitaxial growth on lattice-(mis)matched substrates has advanced the understanding of semiconductors and enabled high-end technologies such as III-V-based light-emitting diodes. However, for metal halide perovskites, there is a knowledge gap in thin film heteroepitaxial growth, hindering progress towards new applications. Here we demonstrate the epitaxial growth of cubic (α)-CH3NH3PbI3 films on lattice-matched KCl substrates by pulsed laser deposition at room temperature. Epitaxial stabilization of α-CH3NH3PbI3 is confirmed via reciprocal space mapping, X-ray diffraction pole figures, electron backscatter diffraction and photoluminescence. A bandgap of 1.66 eV stable for over 300 days and Urbach energies of 12.3 meV for 15-nm-thick films are demonstrated. The impact of strain on α-phase stabilization is corroborated by first-principles density functional theory calculations, which also predict substantial bandgap tunability. This work demonstrates the potential of pulsed laser deposition for vapour-phase heteroepitaxial growth of metal halide perovskites, inspiring studies to unlock novel functionalities.

Název v anglickém jazyce

Room-temperature epitaxy of α-CH3NH3PbI3 halide perovskite by pulsed laser deposition

Popis výsledku anglicky

Epitaxial growth on lattice-(mis)matched substrates has advanced the understanding of semiconductors and enabled high-end technologies such as III-V-based light-emitting diodes. However, for metal halide perovskites, there is a knowledge gap in thin film heteroepitaxial growth, hindering progress towards new applications. Here we demonstrate the epitaxial growth of cubic (α)-CH3NH3PbI3 films on lattice-matched KCl substrates by pulsed laser deposition at room temperature. Epitaxial stabilization of α-CH3NH3PbI3 is confirmed via reciprocal space mapping, X-ray diffraction pole figures, electron backscatter diffraction and photoluminescence. A bandgap of 1.66 eV stable for over 300 days and Urbach energies of 12.3 meV for 15-nm-thick films are demonstrated. The impact of strain on α-phase stabilization is corroborated by first-principles density functional theory calculations, which also predict substantial bandgap tunability. This work demonstrates the potential of pulsed laser deposition for vapour-phase heteroepitaxial growth of metal halide perovskites, inspiring studies to unlock novel functionalities.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2023051" target="_blank" >LM2023051: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nature Synthesis

ISSN

2731-0582

e-ISSN

2731-0582

Svazek periodika

4

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

432-443

Kód UT WoS článku

001397112400001

EID výsledku v databázi Scopus

2-s2.0-85217163549