Recent progress of the RD50 Collaboration - Development of radiation tolerant tracking detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F13%3A00321642" target="_blank" >RIV/68407700:21220/13:00321642 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/13:00321642 RIV/68407700:21670/13:00321642

Výsledek na webu

<a href="http://dx.doi.org/10.22323/1.198.0026" target="_blank" >http://dx.doi.org/10.22323/1.198.0026</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.22323/1.198.0026" target="_blank" >10.22323/1.198.0026</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Recent progress of the RD50 Collaboration - Development of radiation tolerant tracking detectors

Popis výsledku v původním jazyce

The CERN RD50 Collaboration "Radiation hard semiconductor devices for high luminosity colliders" is undertaking a massive R&D programme across High Energy Physics (HEP) Experiments boundaries to develop silicon sensors with increased radiation tolerance. Highest priority is to provide concepts and prototypes of high performance silicon sensors for the High-Luminosity Large Hadron Collider (HL-LHC) Experiments at CERN and other future HEP Experiments operating in severe radiation environments. This paper gives an overview of the RD50 collaboration activities and describes some examples of recent developments. Emphasis is put on the characterization of microscopic radiation induced defects and their impact on the sensor performance, the evaluation and parametrization of electric fields inside irradiated sensors, progress in device modeling using TCAD tools, the use of p-type silicon as strip and pixel sensor material and finally the first steps towards the exploitation of impact ionization (charge multiplication) in irradiated sensors.

Název v anglickém jazyce

Recent progress of the RD50 Collaboration - Development of radiation tolerant tracking detectors

Popis výsledku anglicky

The CERN RD50 Collaboration "Radiation hard semiconductor devices for high luminosity colliders" is undertaking a massive R&D programme across High Energy Physics (HEP) Experiments boundaries to develop silicon sensors with increased radiation tolerance. Highest priority is to provide concepts and prototypes of high performance silicon sensors for the High-Luminosity Large Hadron Collider (HL-LHC) Experiments at CERN and other future HEP Experiments operating in severe radiation environments. This paper gives an overview of the RD50 collaboration activities and describes some examples of recent developments. Emphasis is put on the characterization of microscopic radiation induced defects and their impact on the sensor performance, the evaluation and parametrization of electric fields inside irradiated sensors, progress in device modeling using TCAD tools, the use of p-type silicon as strip and pixel sensor material and finally the first steps towards the exploitation of impact ionization (charge multiplication) in irradiated sensors.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of Science

ISBN

—

ISSN

1824-8039

e-ISSN

1824-8039

Počet stran výsledku

11

Strana od-do

—

Název nakladatele

SISSA/ISAS

Místo vydání

Trieste

Místo konání akce

Lake Starnberg

Datum konání akce

15. 9. 2013

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—