Electronic Structure, Electronic Charge Density and Optical Properties of 3-methyl-1,4-dioxo-1, 4-dohydronaphthalen-2-ylsulfanyl (C13H10O4S)
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F14%3A00220104" target="_blank" >RIV/68407700:21220/14:00220104 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/60076658:12520/14:43886654
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Electronic Structure, Electronic Charge Density and Optical Properties of 3-methyl-1,4-dioxo-1, 4-dohydronaphthalen-2-ylsulfanyl (C13H10O4S)
Popis výsledku v původním jazyce
The atomic positions of 3-methyl-1,4-dioxo-1, 4-dohydronaphthalen-2-yl-sulfanyl (3MDS) single crystal taken from XRD data were optimized by minimizing the forces. We make use of the optimized geometry as a starting point of the comprehensive theoreticalcalculations by employing the all-electron full potential linearized augmented plane wave method to solve the Kohn Sham equations. The calculated electronic band structure and densities of states suggested that this single crystal possesses the energy band gap of about 1.575 eV using the local density approximation, 1.640 eV by generalized gradient approximation, 1.740 eV for the Engel-Vosko generalized gradient approximation and 2.223 eV using modified Becke-Johnson potential (mBJ). From our calculatedelectron charge density distribution, we obtain an image of the electron clouds that surround the molecules in the average unit cell of the crystal. The chemical bonding features were analyzed and the substantial covalent interactions we
Název v anglickém jazyce
Electronic Structure, Electronic Charge Density and Optical Properties of 3-methyl-1,4-dioxo-1, 4-dohydronaphthalen-2-ylsulfanyl (C13H10O4S)
Popis výsledku anglicky
The atomic positions of 3-methyl-1,4-dioxo-1, 4-dohydronaphthalen-2-yl-sulfanyl (3MDS) single crystal taken from XRD data were optimized by minimizing the forces. We make use of the optimized geometry as a starting point of the comprehensive theoreticalcalculations by employing the all-electron full potential linearized augmented plane wave method to solve the Kohn Sham equations. The calculated electronic band structure and densities of states suggested that this single crystal possesses the energy band gap of about 1.575 eV using the local density approximation, 1.640 eV by generalized gradient approximation, 1.740 eV for the Engel-Vosko generalized gradient approximation and 2.223 eV using modified Becke-Johnson potential (mBJ). From our calculatedelectron charge density distribution, we obtain an image of the electron clouds that surround the molecules in the average unit cell of the crystal. The chemical bonding features were analyzed and the substantial covalent interactions we
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
CG - Elektrochemie
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/ED2.1.00%2F01.0024" target="_blank" >ED2.1.00/01.0024: Jihočeské výzkumné centrum akvakultury a biodiverzity hydrocenóz</a><br>
Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2014
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
International Journal of Electrochemical Science
ISSN
1452-3981
e-ISSN
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Svazek periodika
9
Číslo periodika v rámci svazku
1
Stát vydavatele periodika
RS - Srbská republika
Počet stran výsledku
15
Strana od-do
445-459
Kód UT WoS článku
000328931100039
EID výsledku v databázi Scopus
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