Optical features of novel semiconducting crystals Tl1-xGa1-xSnxSe2 (x=0.05; 0.1)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F20%3A00347515" target="_blank" >RIV/68407700:21220/20:00347515 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.ijleo.2019.163572" target="_blank" >https://doi.org/10.1016/j.ijleo.2019.163572</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.ijleo.2019.163572" target="_blank" >10.1016/j.ijleo.2019.163572</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical features of novel semiconducting crystals Tl1-xGa1-xSnxSe2 (x=0.05; 0.1)

Popis výsledku v původním jazyce

The results of the novel Tl1-xGa1-xSnxSe2 single crystals (x = 0.05; 0.1) growth together with complex studies of their optical, electric and photoelectric properties are presented. Semiconductor crystalline alloys Tl2Se, Ga(In)(2)Se-3, SnSe2 possessing congruent melting features has been served as components for the quasi-ternary systems. The Tl2Se-Ga2Se3 was melted congruently at temperature 1073 K. Two compounds existied for the Tl2Se-In(2)Se(3)system: TlInSe2 melting congruently at 1023 K, and Tl2Se-In2Se3 within congruent melting nature at 1029 K. Isothermal section of the Tl2Se-Ga2Se3-SnSe2 system at 520 K have been constructed from X-ray phase and formation of the ternary compounds Tl4SnSe4, Tl2SnSe3, TlGaSe2 was confirmed. The spectral dependences of the absorption coefficients near the fundamental absorption have been studied with respect to direct as indirect dipole allowed inter-band transitions realized in the (TlGaSe2)(1-x)(SnSe2)(x) crystals for the studied temperature range. Follwing the Urbach's energy the role of electron-phonon interaction and structural disorder was analyzed.

Název v anglickém jazyce

Optical features of novel semiconducting crystals Tl1-xGa1-xSnxSe2 (x=0.05; 0.1)

Popis výsledku anglicky

The results of the novel Tl1-xGa1-xSnxSe2 single crystals (x = 0.05; 0.1) growth together with complex studies of their optical, electric and photoelectric properties are presented. Semiconductor crystalline alloys Tl2Se, Ga(In)(2)Se-3, SnSe2 possessing congruent melting features has been served as components for the quasi-ternary systems. The Tl2Se-Ga2Se3 was melted congruently at temperature 1073 K. Two compounds existied for the Tl2Se-In(2)Se(3)system: TlInSe2 melting congruently at 1023 K, and Tl2Se-In2Se3 within congruent melting nature at 1029 K. Isothermal section of the Tl2Se-Ga2Se3-SnSe2 system at 520 K have been constructed from X-ray phase and formation of the ternary compounds Tl4SnSe4, Tl2SnSe3, TlGaSe2 was confirmed. The spectral dependences of the absorption coefficients near the fundamental absorption have been studied with respect to direct as indirect dipole allowed inter-band transitions realized in the (TlGaSe2)(1-x)(SnSe2)(x) crystals for the studied temperature range. Follwing the Urbach's energy the role of electron-phonon interaction and structural disorder was analyzed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optik : International Journal for Light and Electron Optics

ISSN

0030-4026

e-ISSN

1618-1336

Svazek periodika

206

Číslo periodika v rámci svazku

163572

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

000522772400021

EID výsledku v databázi Scopus

2-s2.0-85077312911