Spin Filtering Ability of Patterned Graphene Nanoribbons

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00212047" target="_blank" >RIV/68407700:21230/13:00212047 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.nanocon.eu/files/proceedings/14/reports/1977.pdf" target="_blank" >http://www.nanocon.eu/files/proceedings/14/reports/1977.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Spin Filtering Ability of Patterned Graphene Nanoribbons

Popis výsledku v původním jazyce

The passivated zigzag graphene nanoribbons composed of 2 or 4 atoms wide basis (2-ZGNR or 4-ZGNR) produce strong spin-dependent behavior resulting in a large spin polarization effect. It is shown by analyzing the GNR transmissions calculated by Extended Hückel self-consistent field model (EH-SCF). Our results endorse that for the generation of spin-polarized currents, formation of spin-ordered edge-localized states along the zigzag edges is the key mechanism. We analyzed the influence of various point and planar defects as well as the influence of width and structural composition of GNRs and presented transmission, eigenstates, difference electron densities and electrostatic difference potentials of all respective structures. Since GNRs have long spin-correlation lengths and good ballistic transport characteristics they can be considered as a promising active material of spintronic devices without the need of ferromagnetic electrodes or other magnetic entities. The spin filtering structures could be prepared by the nanolithography of GNR or by the bottom-up approach in future.

Název v anglickém jazyce

Spin Filtering Ability of Patterned Graphene Nanoribbons

Popis výsledku anglicky

The passivated zigzag graphene nanoribbons composed of 2 or 4 atoms wide basis (2-ZGNR or 4-ZGNR) produce strong spin-dependent behavior resulting in a large spin polarization effect. It is shown by analyzing the GNR transmissions calculated by Extended Hückel self-consistent field model (EH-SCF). Our results endorse that for the generation of spin-polarized currents, formation of spin-ordered edge-localized states along the zigzag edges is the key mechanism. We analyzed the influence of various point and planar defects as well as the influence of width and structural composition of GNRs and presented transmission, eigenstates, difference electron densities and electrostatic difference potentials of all respective structures. Since GNRs have long spin-correlation lengths and good ballistic transport characteristics they can be considered as a promising active material of spintronic devices without the need of ferromagnetic electrodes or other magnetic entities. The spin filtering structures could be prepared by the nanolithography of GNR or by the bottom-up approach in future.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

5th International Conference NANOCON 2013 Conference Proceedings

ISBN

978-80-87294-47-5

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

113-117

Název nakladatele

Technická universita Ostrava - Vysoká škola báňská

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

16. 10. 2013

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000352070900018