Modeling of Spiral Polysilicon Divider in High Voltage MOSFET Transistor and Leakage

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00242375" target="_blank" >RIV/68407700:21230/15:00242375 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Modeling of Spiral Polysilicon Divider in High Voltage MOSFET Transistor and Leakage

Popis výsledku v původním jazyce

The power consumption is one of the most important integrated circuit parameters. It is crucial to know the circuit’s estimated leakage power since such a bound will enable the designers to ensure that the circuit meets the standby power constraints which impacts battery life in portable devices. It means that the leakage of MOSFET devices have to be modeled accurately. The first fundamental thesis aim is the accurate gate dimension dependent drain and source leakage modeling. The second fundamental thesis aim is the enhanced model of high voltage spiral divider that allows designing of circuits that can actively control the power consumption.

Název v anglickém jazyce

Modeling of Spiral Polysilicon Divider in High Voltage MOSFET Transistor and Leakage

Popis výsledku anglicky

The power consumption is one of the most important integrated circuit parameters. It is crucial to know the circuit’s estimated leakage power since such a bound will enable the designers to ensure that the circuit meets the standby power constraints which impacts battery life in portable devices. It means that the leakage of MOSFET devices have to be modeled accurately. The first fundamental thesis aim is the accurate gate dimension dependent drain and source leakage modeling. The second fundamental thesis aim is the enhanced model of high voltage spiral divider that allows designing of circuits that can actively control the power consumption.

Druh

O - Ostatní výsledky

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů