Investigation of sub-10nm Cylindrical Surrounding Gate Germanium Nanowire Field Effect Transistor with Different Cross-Section Areas.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00310653" target="_blank" >RIV/68407700:21230/17:00310653 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.spmi.2017.03.020" target="_blank" >http://dx.doi.org/10.1016/j.spmi.2017.03.020</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.spmi.2017.03.020" target="_blank" >10.1016/j.spmi.2017.03.020</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of sub-10nm Cylindrical Surrounding Gate Germanium Nanowire Field Effect Transistor with Different Cross-Section Areas.

Popis výsledku v původním jazyce

Germanium nanowires (GeNWs) with different cross-sectional areas are considered as the channel of a cylindrical surrounding gate field effect transistors (CSGFETs) and the electronic properties of them are calculated through the density functional method and Slater-Koster (SK) tight binding model. The corresponding transistor parameters are obtained using Non-equilibrium Green’s function (NEGF) combined by SK model. We find that SK model predicts the well-nigh same bandgap value compared to meta-GGA-DFT approximation, while GGA-DFT underestimates the value of the bandgap. CSGGeNW-FETs Transistor figure of merit shows a supreme Ion/Ioff ratio which is equal to 10to12 for one of the considered structures with a circular cross-section. The obtained subthreshold swing (SS) values for the FETs illustrate an increment trend when the supercell size of the germanium nanowire increases whereas the transconductance and ON current of the FETs decrease when the GeNW supercell size scales down due to the declining of the density of states and electron transmission spectrum.

Název v anglickém jazyce

Investigation of sub-10nm Cylindrical Surrounding Gate Germanium Nanowire Field Effect Transistor with Different Cross-Section Areas.

Popis výsledku anglicky

Germanium nanowires (GeNWs) with different cross-sectional areas are considered as the channel of a cylindrical surrounding gate field effect transistors (CSGFETs) and the electronic properties of them are calculated through the density functional method and Slater-Koster (SK) tight binding model. The corresponding transistor parameters are obtained using Non-equilibrium Green’s function (NEGF) combined by SK model. We find that SK model predicts the well-nigh same bandgap value compared to meta-GGA-DFT approximation, while GGA-DFT underestimates the value of the bandgap. CSGGeNW-FETs Transistor figure of merit shows a supreme Ion/Ioff ratio which is equal to 10to12 for one of the considered structures with a circular cross-section. The obtained subthreshold swing (SS) values for the FETs illustrate an increment trend when the supercell size of the germanium nanowire increases whereas the transconductance and ON current of the FETs decrease when the GeNW supercell size scales down due to the declining of the density of states and electron transmission spectrum.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Superlattices and Microstructures

ISSN

0749-6036

e-ISSN

—

Svazek periodika

105

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

110-116

Kód UT WoS článku

000401204300014

EID výsledku v databázi Scopus

2-s2.0-85015723527