GaN Transistors Cooling Options Comparison

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00333931" target="_blank" >RIV/68407700:21230/19:00333931 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/8883894" target="_blank" >https://ieeexplore.ieee.org/document/8883894</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/EDPE.2019.8883894" target="_blank" >10.1109/EDPE.2019.8883894</a>

Jazyk výsledku

angličtina

Název v původním jazyce

GaN Transistors Cooling Options Comparison

Popis výsledku v původním jazyce

Three methods of cooling gallium nitride (GaN) transistors have been tested and directly compared together. Under similar conditions, top side cooled GaN was compared to the bottom side cooled type; both were of the same electrical parameters and were mounted on FR4 (fibreglass resin) and aluminium printed circuit boards. At equal dissipated power the proposed bottom side cooled transistor on aluminium board reaches half the temperature compared to the top side cooled one and one fourth of the temperature compared to the bottom side cooled GaN on FR4 board. A High speed driver is placed close to the transistor also on the aluminium IMS (Insulated Metal Substrate) board to reduce parasitic inductance of the gate driving path from control board to the high power side on the aluminium board.

Název v anglickém jazyce

GaN Transistors Cooling Options Comparison

Popis výsledku anglicky

Three methods of cooling gallium nitride (GaN) transistors have been tested and directly compared together. Under similar conditions, top side cooled GaN was compared to the bottom side cooled type; both were of the same electrical parameters and were mounted on FR4 (fibreglass resin) and aluminium printed circuit boards. At equal dissipated power the proposed bottom side cooled transistor on aluminium board reaches half the temperature compared to the top side cooled one and one fourth of the temperature compared to the bottom side cooled GaN on FR4 board. A High speed driver is placed close to the transistor also on the aluminium IMS (Insulated Metal Substrate) board to reduce parasitic inductance of the gate driving path from control board to the high power side on the aluminium board.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2019 International Conference on Electrical Drives & Power Electronics (EDPE)

ISBN

978-1-7281-0389-1

ISSN

—

e-ISSN

1339-3944

Počet stran výsledku

4

Strana od-do

323-326

Název nakladatele

Technical University of Košice

Místo vydání

Košice

Místo konání akce

Nový Smokovec, The High Tatras

Datum konání akce

24. 9. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—