The Bidirectional Phase Control Thyristor
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00341470" target="_blank" >RIV/68407700:21230/20:00341470 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1109/TED.2020.2991690" target="_blank" >https://doi.org/10.1109/TED.2020.2991690</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TED.2020.2991690" target="_blank" >10.1109/TED.2020.2991690</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
The Bidirectional Phase Control Thyristor
Popis výsledku v původním jazyce
The operational principle and design aspects of the bidirectional phase control thyristor (BiPCT) are presented. The BiPCT has been invented with the intention to replace the existing bidirectional control thyristor (BCT) by bringing the advantage of increased surge current, reduced thermal resistance, and reduced processing complexity (cost). This has been achieved by the interdigitation of the anode and cathode regions of both antiparallel connected thyristors, which newly occupy the whole silicon wafer. This requires a new approach to device design, where the most demanding task consists in retaining the commutation turn-off capability and achieving the technology curve between the ON-state voltage VT and the recovery charge Qrr as close to the single phase control thyristor (PCT) as possible. As a prerequisite of reliable operation of the new device concept, short commutation turn-off time of the BiPCT is demonstrated.
Název v anglickém jazyce
The Bidirectional Phase Control Thyristor
Popis výsledku anglicky
The operational principle and design aspects of the bidirectional phase control thyristor (BiPCT) are presented. The BiPCT has been invented with the intention to replace the existing bidirectional control thyristor (BCT) by bringing the advantage of increased surge current, reduced thermal resistance, and reduced processing complexity (cost). This has been achieved by the interdigitation of the anode and cathode regions of both antiparallel connected thyristors, which newly occupy the whole silicon wafer. This requires a new approach to device design, where the most demanding task consists in retaining the commutation turn-off capability and achieving the technology curve between the ON-state voltage VT and the recovery charge Qrr as close to the single phase control thyristor (PCT) as possible. As a prerequisite of reliable operation of the new device concept, short commutation turn-off time of the BiPCT is demonstrated.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
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OECD FORD obor
20201 - Electrical and electronic engineering
Návaznosti výsledku
Projekt
—
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
IEEE Transactions on Electron Devices
ISSN
0018-9383
e-ISSN
1557-9646
Svazek periodika
67
Číslo periodika v rámci svazku
7
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
6
Strana od-do
2844-2849
Kód UT WoS článku
000542842800027
EID výsledku v databázi Scopus
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