Reverse Conduction Loss Minimization in GaN-Based PMSM Drive

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00343982" target="_blank" >RIV/68407700:21230/20:00343982 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.3390/electronics9111973" target="_blank" >https://doi.org/10.3390/electronics9111973</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/electronics9111973" target="_blank" >10.3390/electronics9111973</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Reverse Conduction Loss Minimization in GaN-Based PMSM Drive

Popis výsledku v původním jazyce

Gallium nitride (GaN) devices are becoming more popular in power semiconductor converters. Due to the absence of the freewheeling substrate diode, the reverse conduction region is used in GaN transistors to conduct the freewheeling current. However, the voltage drop across the device in the reverse conduction mode is relatively high, causing additional power losses. These losses can be optimized by adequately adjusting the dead-time issued by the microcontroller. The dead-time loss minimization strategies presented in the literature have the common disadvantage that either additional hardware or specific converter data are needed for their proper operation. Therefore, this paper’s motivation is to present a novel dead-time loss minimization method for GaN-based high-frequency switching converters for electric drives that does not impose additional requirements on the hardware design phase and converter data acquisition. The method is based on optimizing the current controllers’ output with a simple perturb-and-observe tracker. The experimental results show that the proposed approach can minimize the dead-time losses over the whole drive’s operating range at the cost of only a moderate increase in software complexity.

Název v anglickém jazyce

Reverse Conduction Loss Minimization in GaN-Based PMSM Drive

Popis výsledku anglicky

Gallium nitride (GaN) devices are becoming more popular in power semiconductor converters. Due to the absence of the freewheeling substrate diode, the reverse conduction region is used in GaN transistors to conduct the freewheeling current. However, the voltage drop across the device in the reverse conduction mode is relatively high, causing additional power losses. These losses can be optimized by adequately adjusting the dead-time issued by the microcontroller. The dead-time loss minimization strategies presented in the literature have the common disadvantage that either additional hardware or specific converter data are needed for their proper operation. Therefore, this paper’s motivation is to present a novel dead-time loss minimization method for GaN-based high-frequency switching converters for electric drives that does not impose additional requirements on the hardware design phase and converter data acquisition. The method is based on optimizing the current controllers’ output with a simple perturb-and-observe tracker. The experimental results show that the proposed approach can minimize the dead-time losses over the whole drive’s operating range at the cost of only a moderate increase in software complexity.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Electronics

ISSN

2079-9292

e-ISSN

2079-9292

Svazek periodika

9

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

14

Strana od-do

—

Kód UT WoS článku

000593594500001

EID výsledku v databázi Scopus

2-s2.0-85096623087