Programmable 1 A ultra-low dropout LDO regulator for high-resolution camera sensors
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F23%3A00369223" target="_blank" >RIV/68407700:21230/23:00369223 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1016/j.mejo.2023.105899" target="_blank" >https://doi.org/10.1016/j.mejo.2023.105899</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mejo.2023.105899" target="_blank" >10.1016/j.mejo.2023.105899</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Programmable 1 A ultra-low dropout LDO regulator for high-resolution camera sensors
Popis výsledku v původním jazyce
In this article, design and realization of a high-performance linear low dropout regulator (LDO) capable of supplying 1 A of output current, designed and fabricated in 180 nm BCD technology of STMicroelectronics company, is described. The main purpose of this device is providing a stable output voltage for supplying highresolution sensors of cameras in cellphones. The LDO is equipped with a big N-channel power transistor allowing an ultra-low dropout voltage around 50 mV at the maximal load current of 1 A even with a very low level of the output voltage of only 0.4 V. These features make the device suitable as a block following buck switching converters. Emphasis has been laid on assuring 1% accuracy of the output voltage across full temperature range and line and load conditions, very low quiescent current around 32 & mu;A, necessary for battery powered applications such as cellphones, good transient response and a high power supply rejection ratio (PSRR) of more than 85 dB at 1 kHz. This combination of high-level parameters stands for an extraordinary device. The proposed LDO is a programmable device which means that the output voltage (up to 100 voltage versions in total) and other functions can be set via post-package electrical trimming. Last but not least, an efficient design for testability (DFT) is implemented in order to reduce the failed parts to a very low level, guaranteeing the highest quality level needed in the market.
Název v anglickém jazyce
Programmable 1 A ultra-low dropout LDO regulator for high-resolution camera sensors
Popis výsledku anglicky
In this article, design and realization of a high-performance linear low dropout regulator (LDO) capable of supplying 1 A of output current, designed and fabricated in 180 nm BCD technology of STMicroelectronics company, is described. The main purpose of this device is providing a stable output voltage for supplying highresolution sensors of cameras in cellphones. The LDO is equipped with a big N-channel power transistor allowing an ultra-low dropout voltage around 50 mV at the maximal load current of 1 A even with a very low level of the output voltage of only 0.4 V. These features make the device suitable as a block following buck switching converters. Emphasis has been laid on assuring 1% accuracy of the output voltage across full temperature range and line and load conditions, very low quiescent current around 32 & mu;A, necessary for battery powered applications such as cellphones, good transient response and a high power supply rejection ratio (PSRR) of more than 85 dB at 1 kHz. This combination of high-level parameters stands for an extraordinary device. The proposed LDO is a programmable device which means that the output voltage (up to 100 voltage versions in total) and other functions can be set via post-package electrical trimming. Last but not least, an efficient design for testability (DFT) is implemented in order to reduce the failed parts to a very low level, guaranteeing the highest quality level needed in the market.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20201 - Electrical and electronic engineering
Návaznosti výsledku
Projekt
—
Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2023
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Microelectronics Journal
ISSN
0026-2692
e-ISSN
1879-2391
Svazek periodika
139
Číslo periodika v rámci svazku
9
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
12
Strana od-do
—
Kód UT WoS článku
001052501800001
EID výsledku v databázi Scopus
2-s2.0-85169907387