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Programmable 1 A ultra-low dropout LDO regulator for high-resolution camera sensors

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F23%3A00369223" target="_blank" >RIV/68407700:21230/23:00369223 - isvavai.cz</a>

  • Výsledek na webu

    <a href="https://doi.org/10.1016/j.mejo.2023.105899" target="_blank" >https://doi.org/10.1016/j.mejo.2023.105899</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.mejo.2023.105899" target="_blank" >10.1016/j.mejo.2023.105899</a>

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    Programmable 1 A ultra-low dropout LDO regulator for high-resolution camera sensors

  • Popis výsledku v původním jazyce

    In this article, design and realization of a high-performance linear low dropout regulator (LDO) capable of supplying 1 A of output current, designed and fabricated in 180 nm BCD technology of STMicroelectronics company, is described. The main purpose of this device is providing a stable output voltage for supplying highresolution sensors of cameras in cellphones. The LDO is equipped with a big N-channel power transistor allowing an ultra-low dropout voltage around 50 mV at the maximal load current of 1 A even with a very low level of the output voltage of only 0.4 V. These features make the device suitable as a block following buck switching converters. Emphasis has been laid on assuring 1% accuracy of the output voltage across full temperature range and line and load conditions, very low quiescent current around 32 & mu;A, necessary for battery powered applications such as cellphones, good transient response and a high power supply rejection ratio (PSRR) of more than 85 dB at 1 kHz. This combination of high-level parameters stands for an extraordinary device. The proposed LDO is a programmable device which means that the output voltage (up to 100 voltage versions in total) and other functions can be set via post-package electrical trimming. Last but not least, an efficient design for testability (DFT) is implemented in order to reduce the failed parts to a very low level, guaranteeing the highest quality level needed in the market.

  • Název v anglickém jazyce

    Programmable 1 A ultra-low dropout LDO regulator for high-resolution camera sensors

  • Popis výsledku anglicky

    In this article, design and realization of a high-performance linear low dropout regulator (LDO) capable of supplying 1 A of output current, designed and fabricated in 180 nm BCD technology of STMicroelectronics company, is described. The main purpose of this device is providing a stable output voltage for supplying highresolution sensors of cameras in cellphones. The LDO is equipped with a big N-channel power transistor allowing an ultra-low dropout voltage around 50 mV at the maximal load current of 1 A even with a very low level of the output voltage of only 0.4 V. These features make the device suitable as a block following buck switching converters. Emphasis has been laid on assuring 1% accuracy of the output voltage across full temperature range and line and load conditions, very low quiescent current around 32 & mu;A, necessary for battery powered applications such as cellphones, good transient response and a high power supply rejection ratio (PSRR) of more than 85 dB at 1 kHz. This combination of high-level parameters stands for an extraordinary device. The proposed LDO is a programmable device which means that the output voltage (up to 100 voltage versions in total) and other functions can be set via post-package electrical trimming. Last but not least, an efficient design for testability (DFT) is implemented in order to reduce the failed parts to a very low level, guaranteeing the highest quality level needed in the market.

Klasifikace

  • Druh

    J<sub>imp</sub> - Článek v periodiku v databázi Web of Science

  • CEP obor

  • OECD FORD obor

    20201 - Electrical and electronic engineering

Návaznosti výsledku

  • Projekt

  • Návaznosti

    S - Specificky vyzkum na vysokych skolach

Ostatní

  • Rok uplatnění

    2023

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Údaje specifické pro druh výsledku

  • Název periodika

    Microelectronics Journal

  • ISSN

    0026-2692

  • e-ISSN

    1879-2391

  • Svazek periodika

    139

  • Číslo periodika v rámci svazku

    9

  • Stát vydavatele periodika

    GB - Spojené království Velké Británie a Severního Irska

  • Počet stran výsledku

    12

  • Strana od-do

  • Kód UT WoS článku

    001052501800001

  • EID výsledku v databázi Scopus

    2-s2.0-85169907387