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Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F06%3A04120930" target="_blank" >RIV/68407700:21340/06:04120930 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Gallium-based Avalanche Photodiode Optical Crosstalk

Popis výsledku v původním jazyce

Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused bythe parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes.

Název v anglickém jazyce

Gallium-based Avalanche Photodiode Optical Crosstalk

Popis výsledku anglicky

Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused bythe parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2006

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

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Svazek periodika

567

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

3

Strana od-do

239-241

Kód UT WoS článku

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EID výsledku v databázi Scopus

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