Visible CW Laser Emission of GaN-diode Pumped Pr:YAlO3 Crystal

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F09%3A00160259" target="_blank" >RIV/68407700:21340/09:00160259 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Jazyk výsledku
angličtina
Název v původním jazyce
Visible CW Laser Emission of GaN-diode Pumped Pr:YAlO3 Crystal
Popis výsledku v původním jazyce
In the present work we report on spectroscopic properties and laser results of GaN laser diode pumped Pr:YAlO3 crystal at room temperature. The polarization-resolved absorption and emission spectra have been recorded and the decay time of 3P0 manifold has been measured. Three samples with different Pr3+-ion concentrations in YAP matrix have been tested and compared. The best results were achieved for 0.6 at. % Pr3+ ion doping: an output power of 91 mW at 746.9 nm wavelength with a maximum slope efficiency of 45 % with respect to the absorbed power.
Název v anglickém jazyce
Visible CW Laser Emission of GaN-diode Pumped Pr:YAlO3 Crystal
Popis výsledku anglicky
In the present work we report on spectroscopic properties and laser results of GaN laser diode pumped Pr:YAlO3 crystal at room temperature. The polarization-resolved absorption and emission spectra have been recorded and the decay time of 3P0 manifold has been measured. Three samples with different Pr3+-ion concentrations in YAP matrix have been tested and compared. The best results were achieved for 0.6 at. % Pr3+ ion doping: an output power of 91 mW at 746.9 nm wavelength with a maximum slope efficiency of 45 % with respect to the absorbed power.

Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BH - Optika, masery a lasery
OECD FORD obor
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Rok uplatnění
2009
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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