Temperature Dependent Output Characteristics of Pr:YAP Microchip Lasers at 747 nm and 662 nm Wavelengths

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00181194" target="_blank" >RIV/68407700:21340/11:00181194 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1109/CLEOE.2011.5942542" target="_blank" >http://dx.doi.org/10.1109/CLEOE.2011.5942542</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/CLEOE.2011.5942542" target="_blank" >10.1109/CLEOE.2011.5942542</a>

Jazyk výsledku
angličtina
Název v původním jazyce
Temperature Dependent Output Characteristics of Pr:YAP Microchip Lasers at 747 nm and 662 nm Wavelengths
Popis výsledku v původním jazyce
In this contribution, following our previous Pr:YAP crystal investigation, continuous-wave Pr:YAP microchip laser systems operating at 747 and 662 nm wavelength are reported. Moreover, temperature behavior of the gain media in term of laser output properties and emission spectra are described. Laser cavity was formed by dielectric films directly deposited on the crystal surfaces. For longitudinally pumping of the Pr:YAP materials, a 1-W GaN laser diode operating around 448 nm was employed.
Název v anglickém jazyce
Temperature Dependent Output Characteristics of Pr:YAP Microchip Lasers at 747 nm and 662 nm Wavelengths
Popis výsledku anglicky
In this contribution, following our previous Pr:YAP crystal investigation, continuous-wave Pr:YAP microchip laser systems operating at 747 and 662 nm wavelength are reported. Moreover, temperature behavior of the gain media in term of laser output properties and emission spectra are described. Laser cavity was formed by dielectric films directly deposited on the crystal surfaces. For longitudinally pumping of the Pr:YAP materials, a 1-W GaN laser diode operating around 448 nm was employed.

Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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