Assessment of high-power kW-class single-diode bars for use in highly efficient pulsed solid state laser systems

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F15%3A00233129" target="_blank" >RIV/68407700:21340/15:00233129 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2077558" target="_blank" >http://dx.doi.org/10.1117/12.2077558</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2077558" target="_blank" >10.1117/12.2077558</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Assessment of high-power kW-class single-diode bars for use in highly efficient pulsed solid state laser systems

Popis výsledku v původním jazyce

In this work, we present measurements of efficiency-optimized 940 nm diode laser bars with long resonators that are constructed with robustly passivated output facets at the Ferdinand-Braun-Institut (FBH). The measurements were performed at room temperature on a test bench developed at HiLASE Centre, as a function of operating condition. The single-diode bars generated < 1.0 kW when tested with 1 ms pulses at 1-10Hz operating frequency, corresponding to < 1 J per pulse. The maximum electrical-to-opticalefficiency was < 60 %, with operating efficiency at 1 kW of < 50%, limited by the ~ 200 ?? resistance of the bar packaging. In addition, slow axis divergence at 1 kW was below 6° FWHM and spectral width at 1 kW was below 7 nm FWHM, as needed for pumpingYb-doped solid state amplifier crystals.

Název v anglickém jazyce

Assessment of high-power kW-class single-diode bars for use in highly efficient pulsed solid state laser systems

Popis výsledku anglicky

In this work, we present measurements of efficiency-optimized 940 nm diode laser bars with long resonators that are constructed with robustly passivated output facets at the Ferdinand-Braun-Institut (FBH). The measurements were performed at room temperature on a test bench developed at HiLASE Centre, as a function of operating condition. The single-diode bars generated < 1.0 kW when tested with 1 ms pulses at 1-10Hz operating frequency, corresponding to < 1 J per pulse. The maximum electrical-to-opticalefficiency was < 60 %, with operating efficiency at 1 kW of < 50%, limited by the ~ 200 ?? resistance of the bar packaging. In addition, slow axis divergence at 1 kW was below 6° FWHM and spectral width at 1 kW was below 7 nm FWHM, as needed for pumpingYb-doped solid state amplifier crystals.

Druh

D - Stať ve sborníku

CEP obor

JJ - Ostatní materiály

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII

ISBN

978-1-62841-438-7

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

7

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham (stát Washington)

Místo konání akce

San Francisco, CA

Datum konání akce

7. 2. 2015

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000353698600035