Force-Driven Single-Atom Manipulation on a Low-Reactive Si Surface for Tip Sharpening

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F15%3A00369809" target="_blank" >RIV/68407700:21340/15:00369809 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/15:00456665

Výsledek na webu

<a href="https://doi.org/10.1002/smll.201500092" target="_blank" >https://doi.org/10.1002/smll.201500092</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/smll.201500092" target="_blank" >10.1002/smll.201500092</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Force-Driven Single-Atom Manipulation on a Low-Reactive Si Surface for Tip Sharpening

Popis výsledku v původním jazyce

A single atomic manipulation on the delta-doped B:Si(111)-()R30 degrees surface using a low temperature dynamic atomic force microscopy based on the Kolibri sensor is investigated. Through a controlled vertical displacement of the probe, a single Si adatom in order to open a vacancy is removed. It is shown that this process is completely reversible, by accurately placing a Si atom back into the vacancy site. In addition, density functional theory simulations are carried out to understand the underlying mechanism of the atomic manipulation in detail. This process also rearranges the atoms at the tip apex, which can be effectively sharpened in this way. Such sharper tips allow for a deeper look into the Si adatom vacancy site. Namely, high-resolution images of the vacancy showing subsurface Si dangling bond triplets, which surround the substitutional B dopant atom in the first bilayer, are achieved.

Název v anglickém jazyce

Force-Driven Single-Atom Manipulation on a Low-Reactive Si Surface for Tip Sharpening

Popis výsledku anglicky

A single atomic manipulation on the delta-doped B:Si(111)-()R30 degrees surface using a low temperature dynamic atomic force microscopy based on the Kolibri sensor is investigated. Through a controlled vertical displacement of the probe, a single Si adatom in order to open a vacancy is removed. It is shown that this process is completely reversible, by accurately placing a Si atom back into the vacancy site. In addition, density functional theory simulations are carried out to understand the underlying mechanism of the atomic manipulation in detail. This process also rearranges the atoms at the tip apex, which can be effectively sharpened in this way. Such sharper tips allow for a deeper look into the Si adatom vacancy site. Namely, high-resolution images of the vacancy showing subsurface Si dangling bond triplets, which surround the substitutional B dopant atom in the first bilayer, are achieved.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Small

ISSN

1613-6810

e-ISSN

1613-6829

Svazek periodika

11

Číslo periodika v rámci svazku

30

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

3686-3693

Kód UT WoS článku

000359307700014

EID výsledku v databázi Scopus

2-s2.0-84938745893