Cryogenic Tm:YAP microchip laser
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F16%3A00304692" target="_blank" >RIV/68407700:21340/16:00304692 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1117/12.2228890" target="_blank" >http://dx.doi.org/10.1117/12.2228890</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2228890" target="_blank" >10.1117/12.2228890</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Cryogenic Tm:YAP microchip laser
Popis výsledku v původním jazyce
The spectral characteristics of laser active media, and thus those of the laser output, are temperature dependent. Specifically, in almost every crystal host, cooling to low temperatures leads to better heat removal, a higher efficiency and output power, and a reduced lasing threshold. Tm-ion doped lasers have an emission wavelength around 2 mu m and are important in medicine for soft tissue cutting and hemostasis, as well as in LIDAR or atmosphere sensing technology. This paper presents the performance-temperature dependency of a 4 at. % doped Tm:YAP microchip. During the experiment the Tm:YAP crystal was placed inside an evacuated liquid nitrogen cryostat on a cooling finger. As its temperature was varied from 80 K to 340 K, changes were observed in the absorption spectrum, ranging from 750 nm to 2000 nm and in the fluorescence spectrum from 1600 nm to 2050 nm. Fluorescence lifetime was seen to rise and fall with decreasing temperature. The laser was pumped by a 792 nm laser diode and at 80 K the maximum output peak power of the laser was 4.6 W with 23 % slope efficiency and 0.6 W threshold, compared to 2.4 W output peak power, 13 % slope efficiency and 3.3 W threshold when at 340 K. The laser emission wavelength changed from 1883 nm to 1993 nm for 80 K and 300 K, respectively.
Název v anglickém jazyce
Cryogenic Tm:YAP microchip laser
Popis výsledku anglicky
The spectral characteristics of laser active media, and thus those of the laser output, are temperature dependent. Specifically, in almost every crystal host, cooling to low temperatures leads to better heat removal, a higher efficiency and output power, and a reduced lasing threshold. Tm-ion doped lasers have an emission wavelength around 2 mu m and are important in medicine for soft tissue cutting and hemostasis, as well as in LIDAR or atmosphere sensing technology. This paper presents the performance-temperature dependency of a 4 at. % doped Tm:YAP microchip. During the experiment the Tm:YAP crystal was placed inside an evacuated liquid nitrogen cryostat on a cooling finger. As its temperature was varied from 80 K to 340 K, changes were observed in the absorption spectrum, ranging from 750 nm to 2000 nm and in the fluorescence spectrum from 1600 nm to 2050 nm. Fluorescence lifetime was seen to rise and fall with decreasing temperature. The laser was pumped by a 792 nm laser diode and at 80 K the maximum output peak power of the laser was 4.6 W with 23 % slope efficiency and 0.6 W threshold, compared to 2.4 W output peak power, 13 % slope efficiency and 3.3 W threshold when at 340 K. The laser emission wavelength changed from 1883 nm to 1993 nm for 80 K and 300 K, respectively.
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
JA - Elektronika a optoelektronika, elektrotechnika
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/GAP102%2F12%2F0320" target="_blank" >GAP102/12/0320: Pevnolátkové lasery středního infračerveného pásma</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2016
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Proc. SPIE 9893, Laser Sources and Applications III
ISBN
978-1-5106-0138-3
ISSN
0277-786X
e-ISSN
—
Počet stran výsledku
8
Strana od-do
—
Název nakladatele
SPIE
Místo vydání
Bellingham (stát Washington)
Místo konání akce
Brusel
Datum konání akce
3. 4. 2016
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
000381704500019