Yb:YAG disc for high energy laser systems

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F17%3A00315749" target="_blank" >RIV/68407700:21340/17:00315749 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2249039" target="_blank" >http://dx.doi.org/10.1117/12.2249039</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2249039" target="_blank" >10.1117/12.2249039</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Yb:YAG disc for high energy laser systems

Popis výsledku v původním jazyce

Large Yb:YAG crystals were grown using of new improved technology enabling to produce YAG crystals without central growth defect. The crystals diameter reached 115-120 mm and their central part was used for manufacturing of discs with the diameter larger than 55 mm. Both sides of this discs were polished and coated. Doping concentration of Yb3+ ions in Yb:YAG crystals was measured using of X-ray fluorescence spectrometry. Absorption coefficient of Yb:YAG was measured for different doping concentration of Yb3+ ions. Fluorescence decay time of Yb:YAG was measured at temperatures of 300 K and 80 K. We found the fluorescence decay time of the values of 0.95-1 ms at both temperatures stable and independent on the Yb3+ doping concentration in the range of 1-10 at.% Yb/Y demonstrating high chemical purity of grown crystals. Optical homogeneity as measured using of Fizeau double pass interferometer at 633 nm resulted with PV values lower than 0.15 lambda on clear aperture of 35 mm. Polished surfaces were ideally parallel with the wedge lower than 2 arcsec. Uniformity of laser properties of Yb:YAG was veri fied by scanning of the disc as active media in plan-convex pulsed laser resonator pumped by semiconductor diode (wavelength 969 nm, pumping beam diameter 100 mu m). It was confirmed, that newly developed technology allows to manufacture very large high quality Yb:YAG discs suitable for high power lasers and amplifiers.

Název v anglickém jazyce

Yb:YAG disc for high energy laser systems

Popis výsledku anglicky

Large Yb:YAG crystals were grown using of new improved technology enabling to produce YAG crystals without central growth defect. The crystals diameter reached 115-120 mm and their central part was used for manufacturing of discs with the diameter larger than 55 mm. Both sides of this discs were polished and coated. Doping concentration of Yb3+ ions in Yb:YAG crystals was measured using of X-ray fluorescence spectrometry. Absorption coefficient of Yb:YAG was measured for different doping concentration of Yb3+ ions. Fluorescence decay time of Yb:YAG was measured at temperatures of 300 K and 80 K. We found the fluorescence decay time of the values of 0.95-1 ms at both temperatures stable and independent on the Yb3+ doping concentration in the range of 1-10 at.% Yb/Y demonstrating high chemical purity of grown crystals. Optical homogeneity as measured using of Fizeau double pass interferometer at 633 nm resulted with PV values lower than 0.15 lambda on clear aperture of 35 mm. Polished surfaces were ideally parallel with the wedge lower than 2 arcsec. Uniformity of laser properties of Yb:YAG was veri fied by scanning of the disc as active media in plan-convex pulsed laser resonator pumped by semiconductor diode (wavelength 969 nm, pumping beam diameter 100 mu m). It was confirmed, that newly developed technology allows to manufacture very large high quality Yb:YAG discs suitable for high power lasers and amplifiers.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/TA03011141" target="_blank" >TA03011141: Velkoobjemové oxidické monokrystaly pro hi-tech optoelektronické aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 10082 Solid State Lasers XXVI: Technology and Devices

ISBN

9781510606050

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

9

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

San Francisco

Datum konání akce

28. 1. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000402427300012