Numerical Simulations of Temperature Dynamics During cw Laser Irradiation of Silicon Microscale Strips Deposited on a Dielectric Substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F19%3A00336123" target="_blank" >RIV/68407700:21340/19:00336123 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.17973/MMSJ.2019_12_2019100" target="_blank" >https://doi.org/10.17973/MMSJ.2019_12_2019100</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.17973/MMSJ.2019_12_2019100" target="_blank" >10.17973/MMSJ.2019_12_2019100</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Numerical Simulations of Temperature Dynamics During cw Laser Irradiation of Silicon Microscale Strips Deposited on a Dielectric Substrate

Popis výsledku v původním jazyce

The numerical model presented in this article describes the heating of a thin strip of amorphous silicon on glass substrate by a continuous-wave Ar+ laser. The heat flow equation is solved using a finite difference method based on the implicit scheme with splitting by coordinates. A short overview of the methods of numerical analysis is given and the finite difference method is described in details including the numerical scheme, the algorithms with discussion of their validity, the quality of approximation and stability. The results of the simulations with a high spatio-temporal resolution help to determine the exposure time necessary to melt the entire cross-section of silicon strip and to get insight into the final temperature distribution in silicon as well as in the glass substrate.

Název v anglickém jazyce

Numerical Simulations of Temperature Dynamics During cw Laser Irradiation of Silicon Microscale Strips Deposited on a Dielectric Substrate

Popis výsledku anglicky

The numerical model presented in this article describes the heating of a thin strip of amorphous silicon on glass substrate by a continuous-wave Ar+ laser. The heat flow equation is solved using a finite difference method based on the implicit scheme with splitting by coordinates. A short overview of the methods of numerical analysis is given and the finite difference method is described in details including the numerical scheme, the algorithms with discussion of their validity, the quality of approximation and stability. The results of the simulations with a high spatio-temporal resolution help to determine the exposure time necessary to melt the entire cross-section of silicon strip and to get insight into the final temperature distribution in silicon as well as in the glass substrate.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

MM Science Journal

ISSN

1803-1269

e-ISSN

—

Svazek periodika

2019

Číslo periodika v rámci svazku

December

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

6

Strana od-do

3561-3566

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85076619502