1.7 μm diode-pumped Tm:GGAG and Tm, Ho:GGAG 2.0-2.1 μm laser
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F20%3A00343987" target="_blank" >RIV/68407700:21340/20:00343987 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1117/12.2545795" target="_blank" >https://doi.org/10.1117/12.2545795</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2545795" target="_blank" >10.1117/12.2545795</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
1.7 μm diode-pumped Tm:GGAG and Tm, Ho:GGAG 2.0-2.1 μm laser
Popis výsledku v původním jazyce
The lasing of Tm or Tm,Ho-doped mixed gadolinium-gallium-aluminium-garnet (Tm:GGAG and Tm,Ho:GGAG) under 1.7 mu m pumping was investigated for the first time. Three Tm:GGAG samples with Tm3+ concentrations 1.4 at.%, 2.5 at.% and 5.1 at.% (Tm/Gd) and two Tm, Ho:GGAG sample with concentrations 0.4 at.% (Ho/Gd), 4 at.% (Tm/Gd) and 0.7 at.% (Ho/Gd), 7.7 at.% (Tm/Gd) in a form of face-polished plane-parallel plates were available. The original crystal boules were grown by Czochralski method in a slightly oxidative atmosphere. A fiber (core diameter 400 mu m, NA= 0.22) coupled laser diode (Bright Lase Ultra - 100) was used to longitudinally pump each crystal placed in a water cooled (16 degrees C) heat-sink. The laser diode was operated in a pulsed regime (up to 15 ms pulse duration, 10 Hz repetition rate, 1684 nm wavelength, output power amplitude up to 25 W) and CW regime (1690 nm wavelength, power up to 30 W). A hemispherical resonator (30 mm length for CW regime, 120 mm for pulsed regime) was assembled using a flat pumping mirror (HR @ 1.9-2.3 mu m, HT @ 1.7 mu m) and concave output couplers: r = 150 mm, reflectivity approximate to 97.5 % A1.85-2.05 mu m for Tm:GGAG; r = 100 mm, reflectivity approximate to 99 % @ 1.8 - 2.11 mu m for Tm, Ho:GGAG. The 1.4 at.%, 2.5 at.%, 5.1 at.% and 6.9 (Tm/Gd) Tm:GGAG laser efficiencies with respect to the absorbed power were 50 %, 35 %, 26 % and 27 %, respectively, with maximum achieved output power amplitude of 750 mW, 1.9 W, 3.0 W and 4.4 W. The 1.4 at.% and 2.5 at.% sample lasers operated also in CW regime with output powers of 0.6 W and 1.8 W and efficiencies 56 % and 47 % respectively. High slope efficiency of 36 % and broad tuning range 1932-2115 nm was measured for the lower (0.4 at.% (Ho/Gd), 4 at.% (Tm/Gd)) Tm, Ho:GGAG sample. Considering these results, the 1.7 mu m diode pumping appears to be a viable alternative for Tm and Tm, Ho-doped solid-state lasers, especially for lower concentration of the active ions.
Název v anglickém jazyce
1.7 μm diode-pumped Tm:GGAG and Tm, Ho:GGAG 2.0-2.1 μm laser
Popis výsledku anglicky
The lasing of Tm or Tm,Ho-doped mixed gadolinium-gallium-aluminium-garnet (Tm:GGAG and Tm,Ho:GGAG) under 1.7 mu m pumping was investigated for the first time. Three Tm:GGAG samples with Tm3+ concentrations 1.4 at.%, 2.5 at.% and 5.1 at.% (Tm/Gd) and two Tm, Ho:GGAG sample with concentrations 0.4 at.% (Ho/Gd), 4 at.% (Tm/Gd) and 0.7 at.% (Ho/Gd), 7.7 at.% (Tm/Gd) in a form of face-polished plane-parallel plates were available. The original crystal boules were grown by Czochralski method in a slightly oxidative atmosphere. A fiber (core diameter 400 mu m, NA= 0.22) coupled laser diode (Bright Lase Ultra - 100) was used to longitudinally pump each crystal placed in a water cooled (16 degrees C) heat-sink. The laser diode was operated in a pulsed regime (up to 15 ms pulse duration, 10 Hz repetition rate, 1684 nm wavelength, output power amplitude up to 25 W) and CW regime (1690 nm wavelength, power up to 30 W). A hemispherical resonator (30 mm length for CW regime, 120 mm for pulsed regime) was assembled using a flat pumping mirror (HR @ 1.9-2.3 mu m, HT @ 1.7 mu m) and concave output couplers: r = 150 mm, reflectivity approximate to 97.5 % A1.85-2.05 mu m for Tm:GGAG; r = 100 mm, reflectivity approximate to 99 % @ 1.8 - 2.11 mu m for Tm, Ho:GGAG. The 1.4 at.%, 2.5 at.%, 5.1 at.% and 6.9 (Tm/Gd) Tm:GGAG laser efficiencies with respect to the absorbed power were 50 %, 35 %, 26 % and 27 %, respectively, with maximum achieved output power amplitude of 750 mW, 1.9 W, 3.0 W and 4.4 W. The 1.4 at.% and 2.5 at.% sample lasers operated also in CW regime with output powers of 0.6 W and 1.8 W and efficiencies 56 % and 47 % respectively. High slope efficiency of 36 % and broad tuning range 1932-2115 nm was measured for the lower (0.4 at.% (Ho/Gd), 4 at.% (Tm/Gd)) Tm, Ho:GGAG sample. Considering these results, the 1.7 mu m diode pumping appears to be a viable alternative for Tm and Tm, Ho-doped solid-state lasers, especially for lower concentration of the active ions.
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
—
OECD FORD obor
20201 - Electrical and electronic engineering
Návaznosti výsledku
Projekt
<a href="/cs/project/GA18-11954S" target="_blank" >GA18-11954S: Optimalizace pevnolátkových aktivních materiálů pro blízkou a střední infračervenou spektrální oblast</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Proc. SPIE 11259 Solid State Lasers XXIX: Technology and Devices
ISBN
978-1-5106-3281-3
ISSN
0277-786X
e-ISSN
—
Počet stran výsledku
10
Strana od-do
—
Název nakladatele
SPIE
Místo vydání
Bellingham
Místo konání akce
San Francisco, CA
Datum konání akce
1. 2. 2020
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
000568169600002