Tm:YAP microchip laser under 1700 nm and 790 nm diode pumping

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F21%3A00352587" target="_blank" >RIV/68407700:21340/21:00352587 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1117/12.2578332" target="_blank" >https://doi.org/10.1117/12.2578332</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2578332" target="_blank" >10.1117/12.2578332</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tm:YAP microchip laser under 1700 nm and 790 nm diode pumping

Popis výsledku v původním jazyce

Lasing of Tm3+-doped yttrium aluminum perovskite (Tm:YAlO3) microchip laser was investigated. A novel 1.7 μm in-band diode pumping was compared with traditional 0.8 μm pumping of thulium-doped lasers. The sample was b-cut (Pbnm) cylindrical microchip, 5 mm in length and 3 mm in diameter, with its planar surfaces polished and coated: HT for pumping wavelengths (T < 95 % at 1690 nm, T < 95% at 790 nm) and HR R < 99.8 % at 1900–2050 nm at the pumping end and R=97.5–98.5 % at 1900–2050 nm at the output end. The doping concentration was 4 at.% (Tm/Y). The sample was wrapped in an indium foil and held in a water-cooled (11°C) copper holder. For both pumping wavelengths, the sample was longitudinally pumped using a fiber (core diameter 400 μm, NA=0.22) coupled laser diode operating in QCW (25% duty cycle) and CW regime. Under the 1.7 μm diode (delivering up to 30 W at 1680 nm) pumping, obtained slope efficiency (with respect to absorbed power) was 57%. The highest obtained output power amplitude was 14.4 W in QCW and 9.4 W in CW. Under the 0.8 μm diode (delivering up to 20 W at 793 nm) pumping, obtained slope efficiency (with respect to absorbed power) was 58%. The highest obtained output power amplitude was 6.6 W in QCW and 6.9 W in CW. Laser emitted at 1988 nm under all pumping regimes.

Název v anglickém jazyce

Tm:YAP microchip laser under 1700 nm and 790 nm diode pumping

Popis výsledku anglicky

Lasing of Tm3+-doped yttrium aluminum perovskite (Tm:YAlO3) microchip laser was investigated. A novel 1.7 μm in-band diode pumping was compared with traditional 0.8 μm pumping of thulium-doped lasers. The sample was b-cut (Pbnm) cylindrical microchip, 5 mm in length and 3 mm in diameter, with its planar surfaces polished and coated: HT for pumping wavelengths (T < 95 % at 1690 nm, T < 95% at 790 nm) and HR R < 99.8 % at 1900–2050 nm at the pumping end and R=97.5–98.5 % at 1900–2050 nm at the output end. The doping concentration was 4 at.% (Tm/Y). The sample was wrapped in an indium foil and held in a water-cooled (11°C) copper holder. For both pumping wavelengths, the sample was longitudinally pumped using a fiber (core diameter 400 μm, NA=0.22) coupled laser diode operating in QCW (25% duty cycle) and CW regime. Under the 1.7 μm diode (delivering up to 30 W at 1680 nm) pumping, obtained slope efficiency (with respect to absorbed power) was 57%. The highest obtained output power amplitude was 14.4 W in QCW and 9.4 W in CW. Under the 0.8 μm diode (delivering up to 20 W at 793 nm) pumping, obtained slope efficiency (with respect to absorbed power) was 58%. The highest obtained output power amplitude was 6.6 W in QCW and 6.9 W in CW. Laser emitted at 1988 nm under all pumping regimes.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/FW01010219" target="_blank" >FW01010219: Multikomponentní monokrystalické materiály pro laserové aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 11664 Solid State Lasers XXX: Technology and Devices

ISBN

978-1-5106-4163-1

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

12

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

San Francisco, CA

Datum konání akce

6. 3. 2021

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—