Influence of crystal orientation on Ho:YAP microchip laser generation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F23%3A00368736" target="_blank" >RIV/68407700:21340/23:00368736 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1117/12.2665634" target="_blank" >https://doi.org/10.1117/12.2665634</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2665634" target="_blank" >10.1117/12.2665634</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of crystal orientation on Ho:YAP microchip laser generation

Popis výsledku v původním jazyce

The goal of this work was an investigation of Ho:YAP (Ho:YAlO3) crystal as an active medium of resonantly longitudinally pumped multi-watt microchip laser operating at 2.1 µm spectral region. Three Ho:YAP crystals,“a”-cut, “b”-cut, and “c”-cut Pbnm, with the same dimensions (7 mm long, 3 mm in diameter) and Ho-doping concentration (1.06 at.% Ho/Y) were compared. Resonator mirrors were deposited directly on the crystals faces. The output coupler transmission for desired laser emission wavelength range 2.1 µm was 11 % and T = 3 % @ 1.94 µm. The pumping mirror was highly reflecting at 2.1 µm and T = 89 % @ 1.94 µm. Samples were fixed in air-cooled Cu-heatsink and longitudinally pumped by a CW Tm-fibre laser with the maximum output power amplitude of 12 W @ 1939.2 nm behind a focusing lens (f = 200 mm). The laser output power, emission wavelength, and output beam profile were measured in respect to incident pumping power. All three lasers had similar input-output power characteristics with the laser threshold close to 1.5 W and slope efficiencies reaching quantum limit in respect to the incident pumping power. The best result (slope efficiency 79 %, laser threshold 1.54 W, max output power 8.2 W in an almost diffraction-limited, linearly polarized beam) was reached for microchip laser using “b”-cut Ho:YAP crystal. Laser emission wavelength was 2119 nm for “a”-cut and “b”-cut Ho:YAP and 2132 nm for “c”-cut Ho:YAP-based microchip laser. The designed lasers can serve as compact wavelength converters for laser radiation and could be used to expand capabilities of current Tm-fibre lasers used in medicine and industry preserving the overall system efficiency.

Název v anglickém jazyce

Influence of crystal orientation on Ho:YAP microchip laser generation

Popis výsledku anglicky

The goal of this work was an investigation of Ho:YAP (Ho:YAlO3) crystal as an active medium of resonantly longitudinally pumped multi-watt microchip laser operating at 2.1 µm spectral region. Three Ho:YAP crystals,“a”-cut, “b”-cut, and “c”-cut Pbnm, with the same dimensions (7 mm long, 3 mm in diameter) and Ho-doping concentration (1.06 at.% Ho/Y) were compared. Resonator mirrors were deposited directly on the crystals faces. The output coupler transmission for desired laser emission wavelength range 2.1 µm was 11 % and T = 3 % @ 1.94 µm. The pumping mirror was highly reflecting at 2.1 µm and T = 89 % @ 1.94 µm. Samples were fixed in air-cooled Cu-heatsink and longitudinally pumped by a CW Tm-fibre laser with the maximum output power amplitude of 12 W @ 1939.2 nm behind a focusing lens (f = 200 mm). The laser output power, emission wavelength, and output beam profile were measured in respect to incident pumping power. All three lasers had similar input-output power characteristics with the laser threshold close to 1.5 W and slope efficiencies reaching quantum limit in respect to the incident pumping power. The best result (slope efficiency 79 %, laser threshold 1.54 W, max output power 8.2 W in an almost diffraction-limited, linearly polarized beam) was reached for microchip laser using “b”-cut Ho:YAP crystal. Laser emission wavelength was 2119 nm for “a”-cut and “b”-cut Ho:YAP and 2132 nm for “c”-cut Ho:YAP-based microchip laser. The designed lasers can serve as compact wavelength converters for laser radiation and could be used to expand capabilities of current Tm-fibre lasers used in medicine and industry preserving the overall system efficiency.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/FW01010219" target="_blank" >FW01010219: Multikomponentní monokrystalické materiály pro laserové aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 12577, High-power, High-energy Lasers and Ultrafast Optical Technologies

ISBN

978-1-5106-6274-2

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

5

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham (stát Washington)

Místo konání akce

Praha

Datum konání akce

24. 4. 2023

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—