Efficient resonant diode pumping of 2 μm thulium lasers at 1.7 μm

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F24%3A00377859" target="_blank" >RIV/68407700:21340/24:00377859 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1117/12.3002383" target="_blank" >https://doi.org/10.1117/12.3002383</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.3002383" target="_blank" >10.1117/12.3002383</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Efficient resonant diode pumping of 2 μm thulium lasers at 1.7 μm

Popis výsledku v původním jazyce

Tm3+-doped media are actively researched due to the 2 um laser transition F3(4)-> H3(6) of Tm(3+)ion. A diode pumping of the H3(4) manifold has become a standard excitation method, utilizing the availability of 0.8 um GaAlAs-based diodes and efficient cross-relaxation energy transfer. An essential drawback of this scheme results from a strong inter-ionic distance dependence of the cross-relaxation, which therefore requires sufficient Tm(3+)doping to achieve the desired quantum efficiency. This can in turn result in an increased probability of up-conversion losses, clustering of Tm3+ ions, increased generated heat, more difficulties with material growth, and less favorable thermal properties. In this proceeding, we aim to bring attention to the resonant diode pumping of the F-3(4) manifold in the 1.6-1.8 um region and its feasibility. This excitation scheme has a low quantum defect, it circumvents the cross-relaxation requirements, and it is supported by broad absorption peaks. The commercial availability and output power of such diodes is already adequate for a solid-state laser pump source. To illustrate the feasibility, we summarize and expand our results with lasers based on Tm:YAG, Tm:YAP, Tm:YLF, Tm:GGAG and Tm, Ho:GGAG. Crystals were pumped using a 25 W fiber-coupled 1:1 focused diode laser (core diam. = 400 um, waist diam. = 376 um, NA = 0.22, M2 = 52) emitting in the 1.68-1.71 um region. Despite the relatively low spatial and spectral quality of the used 1.7 um diode emission, favorable results were obtained, such as an efficiency of 80% with respect to absorbed power, multi-watt output power in CW regime, or efficient operation of low-concentration crystals.

Název v anglickém jazyce

Efficient resonant diode pumping of 2 μm thulium lasers at 1.7 μm

Popis výsledku anglicky

Tm3+-doped media are actively researched due to the 2 um laser transition F3(4)-> H3(6) of Tm(3+)ion. A diode pumping of the H3(4) manifold has become a standard excitation method, utilizing the availability of 0.8 um GaAlAs-based diodes and efficient cross-relaxation energy transfer. An essential drawback of this scheme results from a strong inter-ionic distance dependence of the cross-relaxation, which therefore requires sufficient Tm(3+)doping to achieve the desired quantum efficiency. This can in turn result in an increased probability of up-conversion losses, clustering of Tm3+ ions, increased generated heat, more difficulties with material growth, and less favorable thermal properties. In this proceeding, we aim to bring attention to the resonant diode pumping of the F-3(4) manifold in the 1.6-1.8 um region and its feasibility. This excitation scheme has a low quantum defect, it circumvents the cross-relaxation requirements, and it is supported by broad absorption peaks. The commercial availability and output power of such diodes is already adequate for a solid-state laser pump source. To illustrate the feasibility, we summarize and expand our results with lasers based on Tm:YAG, Tm:YAP, Tm:YLF, Tm:GGAG and Tm, Ho:GGAG. Crystals were pumped using a 25 W fiber-coupled 1:1 focused diode laser (core diam. = 400 um, waist diam. = 376 um, NA = 0.22, M2 = 52) emitting in the 1.68-1.71 um region. Despite the relatively low spatial and spectral quality of the used 1.7 um diode emission, favorable results were obtained, such as an efficiency of 80% with respect to absorbed power, multi-watt output power in CW regime, or efficient operation of low-concentration crystals.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 12864, Solid State Lasers XXXIII: Technology and Devices

ISBN

978-1-5106-6987-1

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

14

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham (stát Washington)

Místo konání akce

San Francisco, CA

Datum konání akce

27. 1. 2024

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

001211786700002