On the Origin of Reduced Cytotoxicity of Germanium-Doped Diamond-Like Carbon: Role of Top Surface Composition and Bonding

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F21%3A00358393" target="_blank" >RIV/68407700:21460/21:00358393 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/21:00549938

Výsledek na webu

<a href="https://doi.org/10.3390/nano11030567" target="_blank" >https://doi.org/10.3390/nano11030567</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/nano11030567" target="_blank" >10.3390/nano11030567</a>

Jazyk výsledku

angličtina

Název v původním jazyce

On the Origin of Reduced Cytotoxicity of Germanium-Doped Diamond-Like Carbon: Role of Top Surface Composition and Bonding

Popis výsledku v původním jazyce

This work attempts to understand the behaviour of Ge-induced cytotoxicity of germanium-doped hydrogen-free diamond-like carbon (DLC) films recently thoroughly studied and published by Jelinek et al. At a low doping level, the films showed no cytotoxicity, while at a higher doping level, the films were found to exhibit medium to high cytotoxicity. We demonstrate, using surface-sensitive methods-two-angle X-ray-induced core-level photoelectron spectroscopy (ARXPS) and Low Energy Ion Scattering (LEIS) spectroscopy, that at a low doping level, the layers are capped by a carbon film which impedes the contact of Ge species with tissue. For higher Ge content in the DLC films, oxidized Ge species are located at the top surface of the layers, provoking cytotoxicity. The present results indicate no threshold for Ge concentration in cell culture substrate to avoid a severe toxic reaction.

Název v anglickém jazyce

On the Origin of Reduced Cytotoxicity of Germanium-Doped Diamond-Like Carbon: Role of Top Surface Composition and Bonding

Popis výsledku anglicky

This work attempts to understand the behaviour of Ge-induced cytotoxicity of germanium-doped hydrogen-free diamond-like carbon (DLC) films recently thoroughly studied and published by Jelinek et al. At a low doping level, the films showed no cytotoxicity, while at a higher doping level, the films were found to exhibit medium to high cytotoxicity. We demonstrate, using surface-sensitive methods-two-angle X-ray-induced core-level photoelectron spectroscopy (ARXPS) and Low Energy Ion Scattering (LEIS) spectroscopy, that at a low doping level, the layers are capped by a carbon film which impedes the contact of Ge species with tissue. For higher Ge content in the DLC films, oxidized Ge species are located at the top surface of the layers, provoking cytotoxicity. The present results indicate no threshold for Ge concentration in cell culture substrate to avoid a severe toxic reaction.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

30404 - Biomaterials (as related to medical implants, devices, sensors)

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanomaterials

ISSN

2079-4991

e-ISSN

2079-4991

Svazek periodika

11

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

10

Strana od-do

1-10

Kód UT WoS článku

000633950200001

EID výsledku v databázi Scopus

2-s2.0-85101380351