Vše

Co hledáte?

Vše
Projekty
Výsledky výzkumu
Subjekty

Rychlé hledání

  • Projekty podpořené TA ČR
  • Významné projekty
  • Projekty s nejvyšší státní podporou
  • Aktuálně běžící projekty

Chytré vyhledávání

  • Takto najdu konkrétní +slovo
  • Takto z výsledků -slovo zcela vynechám
  • “Takto můžu najít celou frázi”

Photoelectric Detection of Nitrogen-Vacancy Centers Magnetic Resonances in Diamond: Role of Charge Exchanges with Other Optoelectrically Active Defects

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F22%3A00355089" target="_blank" >RIV/68407700:21460/22:00355089 - isvavai.cz</a>

  • Výsledek na webu

    <a href="https://doi.org/10.1002/qute.202100153" target="_blank" >https://doi.org/10.1002/qute.202100153</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/qute.202100153" target="_blank" >10.1002/qute.202100153</a>

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    Photoelectric Detection of Nitrogen-Vacancy Centers Magnetic Resonances in Diamond: Role of Charge Exchanges with Other Optoelectrically Active Defects

  • Popis výsledku v původním jazyce

    The photoelectric detection of nitrogen-vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid-state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin-state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin-state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor-type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low-energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.

  • Název v anglickém jazyce

    Photoelectric Detection of Nitrogen-Vacancy Centers Magnetic Resonances in Diamond: Role of Charge Exchanges with Other Optoelectrically Active Defects

  • Popis výsledku anglicky

    The photoelectric detection of nitrogen-vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid-state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin-state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin-state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor-type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low-energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.

Klasifikace

  • Druh

    J<sub>imp</sub> - Článek v periodiku v databázi Web of Science

  • CEP obor

  • OECD FORD obor

    21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

Návaznosti výsledku

  • Projekt

    <a href="/cs/project/GA20-28980S" target="_blank" >GA20-28980S: Elektricky čtené kvantové diamantové sensory pro nukleární magnetickou resonanci a chemickou detekci</a><br>

  • Návaznosti

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Ostatní

  • Rok uplatnění

    2022

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Údaje specifické pro druh výsledku

  • Název periodika

    Advanced Quantum Technologies

  • ISSN

    2511-9044

  • e-ISSN

    2511-9044

  • Svazek periodika

    5

  • Číslo periodika v rámci svazku

    5

  • Stát vydavatele periodika

    DE - Spolková republika Německo

  • Počet stran výsledku

    13

  • Strana od-do

  • Kód UT WoS článku

    000769998600001

  • EID výsledku v databázi Scopus

    2-s2.0-85126356169