Dynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and Timepix

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F12%3A00204235" target="_blank" >RIV/68407700:21670/12:00204235 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Dynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and Timepix

Popis výsledku v původním jazyce

This paper presents a novel technique allowing for the measurement and visualization of the spatial distribution and time evolution of the charge collection process in semiconductor sensors of ionizing radiation. The study was carried out with a pixelated high resistivity silicon sensor bump-bonded to the Timepix readout chip (256 x 256 pixels, with pitch of 55 ?m). The sensor was irradiated with energetic protons (132 MeV) and carbon ions (240MeV/u) entering the sensor at shallow angles. Such ions penetrate the full sensor thickness ionizing and depositing charge along their tracks. The charge deposited is collected by individual pixels of the Timepix chip operated in Time mode. The overall accuracy of these measurements was enhanced by averaging manyparticle tracks. The time accuracy is in order of nanoseconds and the position accuracy is about 5 ?m. The purpose of this work is to demonstrate the accurate measurement that may be used with the mathematical model to investigate the el

Název v anglickém jazyce

Dynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and Timepix

Popis výsledku anglicky

This paper presents a novel technique allowing for the measurement and visualization of the spatial distribution and time evolution of the charge collection process in semiconductor sensors of ionizing radiation. The study was carried out with a pixelated high resistivity silicon sensor bump-bonded to the Timepix readout chip (256 x 256 pixels, with pitch of 55 ?m). The sensor was irradiated with energetic protons (132 MeV) and carbon ions (240MeV/u) entering the sensor at shallow angles. Such ions penetrate the full sensor thickness ionizing and depositing charge along their tracks. The charge deposited is collected by individual pixels of the Timepix chip operated in Time mode. The overall accuracy of these measurements was enhanced by averaging manyparticle tracks. The time accuracy is in order of nanoseconds and the position accuracy is about 5 ?m. The purpose of this work is to demonstrate the accurate measurement that may be used with the mathematical model to investigate the el

Druh

D - Stať ve sborníku

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

<a href="/cs/project/TA01010237" target="_blank" >TA01010237: Pracoviště pro nedestruktivní testování, diagnostiku a 3D zobrazování pomocí neutronové radiografie a tomografie</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

ISBN

978-1-4673-2029-0

ISSN

1095-7863

e-ISSN

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Počet stran výsledku

4

Strana od-do

4184-4187

Název nakladatele

Institute of Electrical and Electronic Engineers

Místo vydání

Piscataway

Místo konání akce

Anaheim

Datum konání akce

29. 10. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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