Fabrication, characterization and simulation of channel stop for n in p-substrate silicon pixel detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F14%3A00223627" target="_blank" >RIV/68407700:21670/14:00223627 - isvavai.cz</a>

Výsledek na webu

<a href="http://iopscience.iop.org/1748-0221/9/07/C07013" target="_blank" >http://iopscience.iop.org/1748-0221/9/07/C07013</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/9/07/C07013" target="_blank" >10.1088/1748-0221/9/07/C07013</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Fabrication, characterization and simulation of channel stop for n in p-substrate silicon pixel detectors

Popis výsledku v původním jazyce

Silicon detectors made on p-substrates are expected to have a better radiation hardness as compared to detectors made on n-substrates. However, the fixed positive oxide charges induce an inversion layer of electrons in the substrate, which connects the pixels. The common means of solving this problem is by using a p-spray, individual p-stops or a combination of the two. Here, we investigate the use of field plates to suppress the fixed positive charges and to prevent the formation of an inversion layer.The fabricated detector shows a high breakdown voltage and low interpixel leakage current for a structure using biased field plates with a width of 20 ?m. By using a spice model for simulation of the preamplifier, a cross talk of about 1.6% is achievedwith this detector structure. The cross talk is caused by capacitive and resistive coupling between the pixels.

Název v anglickém jazyce

Fabrication, characterization and simulation of channel stop for n in p-substrate silicon pixel detectors

Popis výsledku anglicky

Silicon detectors made on p-substrates are expected to have a better radiation hardness as compared to detectors made on n-substrates. However, the fixed positive oxide charges induce an inversion layer of electrons in the substrate, which connects the pixels. The common means of solving this problem is by using a p-spray, individual p-stops or a combination of the two. Here, we investigate the use of field plates to suppress the fixed positive charges and to prevent the formation of an inversion layer.The fabricated detector shows a high breakdown voltage and low interpixel leakage current for a structure using biased field plates with a width of 20 ?m. By using a spice model for simulation of the preamplifier, a cross talk of about 1.6% is achievedwith this detector structure. The cross talk is caused by capacitive and resistive coupling between the pixels.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

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Projekt

<a href="/cs/project/LG13031" target="_blank" >LG13031: Spolupráce ČR s CERN</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

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Svazek periodika

9

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

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Kód UT WoS článku

000340050700013

EID výsledku v databázi Scopus

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