Characterization of a pixelated CdTe Timepix detector operated in ToT mode

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F17%3A00308647" target="_blank" >RIV/68407700:21670/17:00308647 - isvavai.cz</a>

Výsledek na webu

<a href="http://iopscience.iop.org/article/10.1088/1748-0221/12/01/P01018" target="_blank" >http://iopscience.iop.org/article/10.1088/1748-0221/12/01/P01018</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/12/01/P01018" target="_blank" >10.1088/1748-0221/12/01/P01018</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of a pixelated CdTe Timepix detector operated in ToT mode

Popis výsledku v původním jazyce

A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 x 256 pixels, with a pixel pitch of 55 μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an (2)⁴¹Am source, photons from a ¹37Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300 μm thick silicon Timepix device. The electron mobility-lifetime product (μ_eτ_e) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

Název v anglickém jazyce

Characterization of a pixelated CdTe Timepix detector operated in ToT mode

Popis výsledku anglicky

A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 x 256 pixels, with a pixel pitch of 55 μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an (2)⁴¹Am source, photons from a ¹37Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300 μm thick silicon Timepix device. The electron mobility-lifetime product (μ_eτ_e) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10303 - Particles and field physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Svazek periodika

12

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

13

Strana od-do

—

Kód UT WoS článku

000395769600018

EID výsledku v databázi Scopus

2-s2.0-85012071201