THE EFFECT OF THE EXALITE DOPANT ON PHOTOLUMINESCENCE OF POLY[METHYLPHENYLSILANE] IN THIN FILMS

Kód výsledku v IS VaVaI

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RIV/70883521:28610/12:43869313

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

THE EFFECT OF THE EXALITE DOPANT ON PHOTOLUMINESCENCE OF POLY[METHYLPHENYLSILANE] IN THIN FILMS

Popis výsledku v původním jazyce

Polysilanes are known as representatives of ?-conjugated polymers which exhibit unique characteristic properties such as absorption and photoluminescence in UV region with a small Stoke?s shift, which is closely related to their electronic structure andexciton formation on the main silicon chain. This group of materials is considered for optoelectronic applications, for instance in nanolithography, in OLED devices or in photovoltaics as an active layer. In this work, we used poly(methylphenylsilane) asa p-type semiconductive material and Exalite 351 as an electron acceptor in the structure of host-dopant system for active layer in electronic devices in order to investigate the influence of dopant on photoluminescence of PMPSi. Polymer and polymer/dopant thin films were deposited on silicon substrate, with thickness in range of hundreds nanometers. The properties of thin films were characterized by UV/VIS absorption spectrometry and by fluorimetry.

Název v anglickém jazyce

THE EFFECT OF THE EXALITE DOPANT ON PHOTOLUMINESCENCE OF POLY[METHYLPHENYLSILANE] IN THIN FILMS

Popis výsledku anglicky

Polysilanes are known as representatives of ?-conjugated polymers which exhibit unique characteristic properties such as absorption and photoluminescence in UV region with a small Stoke?s shift, which is closely related to their electronic structure andexciton formation on the main silicon chain. This group of materials is considered for optoelectronic applications, for instance in nanolithography, in OLED devices or in photovoltaics as an active layer. In this work, we used poly(methylphenylsilane) asa p-type semiconductive material and Exalite 351 as an electron acceptor in the structure of host-dopant system for active layer in electronic devices in order to investigate the influence of dopant on photoluminescence of PMPSi. Polymer and polymer/dopant thin films were deposited on silicon substrate, with thickness in range of hundreds nanometers. The properties of thin films were characterized by UV/VIS absorption spectrometry and by fluorimetry.

Druh

D - Stať ve sborníku

CEP obor

CD - Makromolekulární chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2012

ISBN

978-80-87294-32-1

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

1-4

Název nakladatele

Tanger spol. s r. o.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

23. 10. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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