Microwave-assisted synthesis of FexZn1-xO nanoparticles for use in MEH-PPV nanocomposites and their application in polymer light-emitting diodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F19%3A63523527" target="_blank" >RIV/70883521:28110/19:63523527 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/70883521:28610/19:63523527 RIV/00216305:26310/19:PU132401

Výsledek na webu

<a href="https://link.springer.com/article/10.1007%2Fs10854-019-01473-z" target="_blank" >https://link.springer.com/article/10.1007%2Fs10854-019-01473-z</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-019-01473-z" target="_blank" >10.1007/s10854-019-01473-z</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Microwave-assisted synthesis of FexZn1-xO nanoparticles for use in MEH-PPV nanocomposites and their application in polymer light-emitting diodes

Popis výsledku v původním jazyce

A one-step microwave-assisted polyol method was used to fabricate Fe x Zn 1−x O (x = 0.01, 0.05, 0.10) nanoparticles. Zinc acetate dihydrate, iron (III) acetylacetonate, oleic acid and diethylene glycol were placed in a Teflon-lined reaction vessel. The reaction mixture was heated up to 250 °C for 15 min in a microwave reactor. The surface modification with oleic acid prevented agglomeration of the nanoparticles. The X-ray diffraction analysis revealed characteristics wurtzite hexagonal structure of ZnO and successful incorporation of the Fe dopant into the host crystal lattice. Doping of ZnO by Fe led to bandgap modification as estimated by Tauc plot. The as-prepared nanopowders were dispersed in toluene and mixed with a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) polymer to make stable homogenous dispersions. Then, the Fe x Zn 1−x O/MEH-PPV nanocomposite thin films were prepared by spin coating and used as thin active layers in polymer light-emitting diodes. The thickness of deposited Fe x Zn 1−x O/MEH-PPV film was ca. 30 nm and that of reference neat MEH-PPV film was ca. 25 nm. The electroluminescent spectroscopy study showed that direct blending of MEH-PPV with Fe-doped ZnO nanoparticles is a simple and effective approach to significantly increase the luminance intensity of the diode in comparison to the diode fabricated by neat MEH-PPV.

Název v anglickém jazyce

Microwave-assisted synthesis of FexZn1-xO nanoparticles for use in MEH-PPV nanocomposites and their application in polymer light-emitting diodes

Popis výsledku anglicky

A one-step microwave-assisted polyol method was used to fabricate Fe x Zn 1−x O (x = 0.01, 0.05, 0.10) nanoparticles. Zinc acetate dihydrate, iron (III) acetylacetonate, oleic acid and diethylene glycol were placed in a Teflon-lined reaction vessel. The reaction mixture was heated up to 250 °C for 15 min in a microwave reactor. The surface modification with oleic acid prevented agglomeration of the nanoparticles. The X-ray diffraction analysis revealed characteristics wurtzite hexagonal structure of ZnO and successful incorporation of the Fe dopant into the host crystal lattice. Doping of ZnO by Fe led to bandgap modification as estimated by Tauc plot. The as-prepared nanopowders were dispersed in toluene and mixed with a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) polymer to make stable homogenous dispersions. Then, the Fe x Zn 1−x O/MEH-PPV nanocomposite thin films were prepared by spin coating and used as thin active layers in polymer light-emitting diodes. The thickness of deposited Fe x Zn 1−x O/MEH-PPV film was ca. 30 nm and that of reference neat MEH-PPV film was ca. 25 nm. The electroluminescent spectroscopy study showed that direct blending of MEH-PPV with Fe-doped ZnO nanoparticles is a simple and effective approach to significantly increase the luminance intensity of the diode in comparison to the diode fabricated by neat MEH-PPV.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Science: Materials in Electronics

ISSN

0957-4522

e-ISSN

—

Svazek periodika

30

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

13

Strana od-do

11269-11281

Kód UT WoS článku

000472079200033

EID výsledku v databázi Scopus

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