Correlative Raman imaging and scanning electron microscopy: The role of single Ga islands in surface-enhanced Raman spectroscopy of graphene

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F22%3A63552338" target="_blank" >RIV/70883521:28110/22:63552338 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26210/22:PU144286

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acs.jpcc.1c10426" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.jpcc.1c10426</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.1c10426" target="_blank" >10.1021/acs.jpcc.1c10426</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Correlative Raman imaging and scanning electron microscopy: The role of single Ga islands in surface-enhanced Raman spectroscopy of graphene

Popis výsledku v původním jazyce

Surface-enhanced Raman spectroscopy (SERS) is a perspective nondestructive analytic technique enabling the detection of individual nanoobjects, even single molecules. In this paper, we have studied the morphology of Ga islands deposited on chemical vapor deposition graphene by ultrahigh vacuum evaporation and local optical response of this system by the correlative Raman imaging and scanning electron microscopy (RISE). Contrary to the previous papers, where only an integral Raman response from the whole ununiformed Ga nanoparticles (NPs) ensembles on graphene was investigated, the RISE technique has enabled us to detect graphene Raman peaks enhanced by single Ga islands and particularly to correlate the Raman signal with the shape and size of these single particles. In this way and by a support of numerical simulations, we have proved a plasmonic nature of the Raman signal enhancement related to localized surface plasmon resonances. It has been found that this enhancement is island-size-dependent and shows a maximum for medium-sized Ga islands. A reasonable agreement between the simulations of the plasmon enhancement of electric fields in the vicinity of Ga islands and the experimental intensities of corresponding Raman peaks proved the plasmonic origin of the observed effect known as SERS

Název v anglickém jazyce

Correlative Raman imaging and scanning electron microscopy: The role of single Ga islands in surface-enhanced Raman spectroscopy of graphene

Popis výsledku anglicky

Surface-enhanced Raman spectroscopy (SERS) is a perspective nondestructive analytic technique enabling the detection of individual nanoobjects, even single molecules. In this paper, we have studied the morphology of Ga islands deposited on chemical vapor deposition graphene by ultrahigh vacuum evaporation and local optical response of this system by the correlative Raman imaging and scanning electron microscopy (RISE). Contrary to the previous papers, where only an integral Raman response from the whole ununiformed Ga nanoparticles (NPs) ensembles on graphene was investigated, the RISE technique has enabled us to detect graphene Raman peaks enhanced by single Ga islands and particularly to correlate the Raman signal with the shape and size of these single particles. In this way and by a support of numerical simulations, we have proved a plasmonic nature of the Raman signal enhancement related to localized surface plasmon resonances. It has been found that this enhancement is island-size-dependent and shows a maximum for medium-sized Ga islands. A reasonable agreement between the simulations of the plasmon enhancement of electric fields in the vicinity of Ga islands and the experimental intensities of corresponding Raman peaks proved the plasmonic origin of the observed effect known as SERS

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical chemistry Prat C: Nanomaterials and Interfaces

ISSN

1932-7447

e-ISSN

—

Svazek periodika

126

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

4508-4514

Kód UT WoS článku

000772201900023

EID výsledku v databázi Scopus

2-s2.0-85126117219