High-temperature ultrasensitive FET-based CVD graphene Hall probes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F25%3A63596858" target="_blank" >RIV/70883521:28110/25:63596858 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acsaelm.5c00351" target="_blank" >https://pubs.acs.org/doi/10.1021/acsaelm.5c00351</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaelm.5c00351" target="_blank" >10.1021/acsaelm.5c00351</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-temperature ultrasensitive FET-based CVD graphene Hall probes

Popis výsledku v původním jazyce

Hall probes play a critical role in industrial applications such as electrical compasses, current sensors, and motion detectors; however, their performance often deteriorates at high temperatures. This study presents a magnetic-field probe with an ultrahigh sensitivity of 880 Ω/T at 150 °C, achieved using a graphene Hall bar integrated into a field-effect transistor (FET) architecture. To attain this exceptional sensitivity at elevated temperatures, careful control of doping, passivation, and manufacturing defects is essential. The doping level is optimized by adjusting the gate voltage to maintain the carrier concentration near the charge neutrality point (CNP). Further improvements in sensor response at high temperatures, as well as nearly a 2-fold increase in sensitivity at room temperature, are realized through polymer passivation of graphene. In contrast, it is demonstrated that patterning graphene into a narrower channel can increase the number of defects, which reduces the Hall probe’s sensitivity. These findings demonstrate the potential of CVD graphene as a durable and high-performance material for Hall probes in challenging environments.

Název v anglickém jazyce

High-temperature ultrasensitive FET-based CVD graphene Hall probes

Popis výsledku anglicky

Hall probes play a critical role in industrial applications such as electrical compasses, current sensors, and motion detectors; however, their performance often deteriorates at high temperatures. This study presents a magnetic-field probe with an ultrahigh sensitivity of 880 Ω/T at 150 °C, achieved using a graphene Hall bar integrated into a field-effect transistor (FET) architecture. To attain this exceptional sensitivity at elevated temperatures, careful control of doping, passivation, and manufacturing defects is essential. The doping level is optimized by adjusting the gate voltage to maintain the carrier concentration near the charge neutrality point (CNP). Further improvements in sensor response at high temperatures, as well as nearly a 2-fold increase in sensitivity at room temperature, are realized through polymer passivation of graphene. In contrast, it is demonstrated that patterning graphene into a narrower channel can increase the number of defects, which reduces the Hall probe’s sensitivity. These findings demonstrate the potential of CVD graphene as a durable and high-performance material for Hall probes in challenging environments.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Electronic Materials

ISSN

2637-6113

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

5889-5897

Kód UT WoS článku

001518463400001

EID výsledku v databázi Scopus

2-s2.0-105008580301