Anisotropic Magnetoresistive Effect - from the principle to the sensor

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Anisotropic Magnetoresistive Effect - from the principle to the sensor

Popis výsledku v původním jazyce

The anisotropic magnetoresistive sensors are an attractive alternative to the Hall effect-based sensors, in particular thanks to the comparable level of miniaturization, accompanied by higher sensitivity. These sensors exploit the anisotropic magnetoresistive effect in ferromagnetic metals. The resistance imposed to the flowing current is dependent on the angle of magnetization, the difference between the maximum and minimum resistance reaching units of percent. Sensors based on the anisotropic magnetoresistive effect almost exclusively rely on thin layers of appropriate ferromagnetic alloys. The used material, the way of the deposition and the geometry of the sensor, influencing the magnetoresistive effect itself as well as the range and sensitivity of the sensor, are the decisive parameters for the proper function of the sensor. The characteristic of the magnetoresistive element is linearized and the full-bridge configuration consisting of four elements is mostly used in the sensors.

Název v anglickém jazyce

Anisotropic Magnetoresistive Effect - from the principle to the sensor

Popis výsledku anglicky

The anisotropic magnetoresistive sensors are an attractive alternative to the Hall effect-based sensors, in particular thanks to the comparable level of miniaturization, accompanied by higher sensitivity. These sensors exploit the anisotropic magnetoresistive effect in ferromagnetic metals. The resistance imposed to the flowing current is dependent on the angle of magnetization, the difference between the maximum and minimum resistance reaching units of percent. Sensors based on the anisotropic magnetoresistive effect almost exclusively rely on thin layers of appropriate ferromagnetic alloys. The used material, the way of the deposition and the geometry of the sensor, influencing the magnetoresistive effect itself as well as the range and sensitivity of the sensor, are the decisive parameters for the proper function of the sensor. The characteristic of the magnetoresistive element is linearized and the full-bridge configuration consisting of four elements is mostly used in the sensors.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10303 - Particles and field physics

Projekt

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Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Habilitační přednášky ČVUT

ISBN

978-80-01-05695-0

ISSN

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e-ISSN

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Počet stran výsledku

36

Strana od-do

1-36

Název nakladatele

ČVUT

Místo vydání

Praha

Místo konání akce

Praha

Datum konání akce

1. 1. 2015

Typ akce podle státní příslušnosti

CST - Celostátní akce

Kód UT WoS článku

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